Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

Yan, Hongyuan; Xing, Yingjie; Hang, Qingling; Yu, Dapeng; Wang, Y.P; Xu, Jun; Xi, Zhonghe; Feng, Sun

doi:10.1016/s0009-2614(00)00519-4

Cited by 247 publications

(118 citation statements)

References 12 publications

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“…Ni as the mobile species moves through NiSi during the transition from NiSi to the NiSi 2 phase at 750…1000°C [22]. NiSi 2 distributed in SiO x film passivates the broken bonds on the nc-Si surface [23]. The model of NiSi 2 passivation was proved by thermodynamic analysis and Fourier transform infrared spectroscopy in SiO 1.56 /Ni/Si systems [3].…”

Section: Resultsmentioning

confidence: 98%

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures

Michailovska¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiO x /Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL band in SiO x /Ni/Si samples is essentially higher than that in reference SiO x /Si samples (without the nickel interlayer) with the same characteristics and treatment. The PL intensity enhancement factor is equal to 5.77 for normally deposited samples and 18 for obliquely deposited samples. The unchanged spectral shape of PL bands and similar position of PL maximum in samples with and without nickel silicide interlayer indicates that in the SiO x /Ni/Si structures after annealing no additional emitting centers are introduced to compare with reference one. Time-resolved measurements showed that PL decay rate was decreased from 8. for SiO x /Si specimens to 2.8610 4 s -1 for SiO x /Ni/Si one. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretchedexponential model. The observed narrow decay rate distribution, decrease of the PL decay rate and enhancement of the PL intensity in SiO x /Ni/Si samples can be assigned to the processes of nickel silicide passivation of the dangling bonds at the interface of Si nanoparticles and the silicon oxide matrix, which is more effective in porous samples.

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Section: Resultsmentioning

confidence: 98%

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures

Michailovska¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Metal References 300-600 Au Westwater et al, 1997;Zeng et al, 2003 1150-1200 Fe Yu et al, 1998;Wang et al, 1999;Feng et al, 2000;Zhang et al 1998 VLS …”

Section: Growth/synthesis Types Processing Temperature [ O C]mentioning

confidence: 99%

Nickel Silicide Nanowire Growth and Applications

Kim¹

2010

Nanowires Science and Technology

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“…The only source of silicon is "apparently" the solid silicon wafer. Based on the bulk Au-Si phase diagram, many researchers [2][3][4] postulated that the growth of nanowires by the SLS mechanism occurred through silicon diffusion from the substrate to the gold-silicon melt formed on the surface at high temperatures. With time, more silicon from the substrate diffuses into the droplet, making it supersaturated with silicon and then the coexisting pure silicon phase precipitates and crystallizes as nanowires.…”

Section: Introductionmentioning

confidence: 99%

Preparation of silicon-based nanowires and the thermochemistry of the process

Hourlier

Lefebvre-Legry

Perrot³

2009

XXXV JEEP – 35th Conference on Phase Equilibria

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The present paper is part of a general investigation of the thermodynamic properties of metal-semiconductor systems involved in the nanowires growth. Here, we will show that many aspects of the growth mechanisms, such as the surface curvature of the solid phase (in the nano or micrometer range), in equilibrium with the liquid phase are extremely important. We calculate and construct all binary Au-Si phase diagrams corresponding to nanosystems. By choosing the S(V)LS process rather than the VLS process, we succeeded in answering not only the origin of the driving force needed to trigger off the precipitation of solid nanowire but also the thorny question of the size limit of nanowires in relation with our specific growth conditions.

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Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

Cited by 247 publications

References 12 publications

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures

Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures

Nickel Silicide Nanowire Growth and Applications

Preparation of silicon-based nanowires and the thermochemistry of the process

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