Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

Chang, Shao Wei; Ishikawa, K.; Sugiyama, Mutsumi

doi:10.1016/j.tsf.2015.06.003

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…7, the energy band gap of ZTO films was estimated by using the Tauc plots [38] based on the absorption edge of the transmittance curve, assuming the direct transition between valence and conduction bands. The estimated values of the energy band gap were in the range of 3.10-3.80 eV, which is similar to those reported by other research groups [37,39]. Young et al reported that crystalline ZTO thin films deposited by the sputtering technique showed a direct optical band gap in the range 3.3-3.9 eV, which was influenced by Burstein-Moss shift effect and structural dissimilarity of the ZTO thin films [37].…”

Section: Effect Of Zto Compositionsupporting

confidence: 87%

Yb-doped zinc tin oxide thin film and its application to Cu(InGa)Se2 solar cells

Park

Ferblantier

Slaoui

et al. 2020

Journal of Alloys and Compounds

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Section: Effect Of Zto Compositionsupporting

confidence: 87%

Yb-doped zinc tin oxide thin film and its application to Cu(InGa)Se2 solar cells

Park

Ferblantier

Slaoui

et al. 2020

Journal of Alloys and Compounds

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“…Thermal evaporation of SnS was applied for SnS/ZnO heterostructures [8]. Heterostructures with ZnO-based alloys (Zn(SO), (ZnMg)O, (ZnSn)O) were also fabricated recently [1,9,10]. Pulse electrochemical deposition (ECD) of SnS was adopted by Ichimura et al [11] and Gunasekaran et al [12] for heterostructure fabrication with ZnO and CdS, respectively.…”

Section: Introductionmentioning

confidence: 99%

Effects of Tartaric Acid on Electrochemical Deposition of SnS in ZnO/SnS Heterostructures

Supee

Ichimura

2016

Trans. Mat. Res. Soc. Japan

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ZnO/SnS heterostructures were fabricated by electrochemical deposition (ECD) for application to solar cells. SnS was deposited by three-step pulse ECD from a solution containing 100 mM Na 2 S 2 O 3 and 30 mM SnSO 4 . To improve the film properties, tartaric acid (C 4 H 6 O 6 ) was introduced as a complexing agent into the SnS deposition solution. The deposition with 100 mM tartaric acid resulted in larger optical transmittance and smaller oxygen content. ZnO was deposited on SnS by two steps pulse ECD from a solution containing Zn(NO 3 ) 2 . Both the heterostructures fabricated with/without tartaric acid showed clear rectifying properties. However, photovoltaic properties were not improved by the addition of tartaric acid.

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A study of the structural, optical, and electrical properties of SnS2:Cu optical semiconductor thin films deposited by the spray pyrolysis technique

Fadavieslam

2016

J Mater Sci: Mater Electron

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Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

Cited by 4 publications

References 27 publications

Yb-doped zinc tin oxide thin film and its application to Cu(InGa)Se2 solar cells

Yb-doped zinc tin oxide thin film and its application to Cu(InGa)Se2 solar cells

Effects of Tartaric Acid on Electrochemical Deposition of SnS in ZnO/SnS Heterostructures

A study of the structural, optical, and electrical properties of SnS2:Cu optical semiconductor thin films deposited by the spray pyrolysis technique

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