Growth of analog AlxGa1−xAs/GaAs parabolic quantum wells by molecular beam epitaxy

Abstract

Parabolic AlxGa1−xAs/GaAs quantum wells have been grown by molecular beam epitaxy with linear ramping of the Al effusion cell temperature, where the ramping rate was carefully analyzed to avoid a flux lag. The calculated potential profile from the temperature variation was very close to the parabolic one. Low-temperature photoluminescence showed clear interband transitions up to the n=3 sublevels. The equal energy spacing between adjacent transitions involving heavy-hole states confirmed the parabolic shape of the quantum well.

Interband absorption and exciton binding energy in an inverse parabolic quantum well under the magnetic field

“…As known, with atomic layer-by-layer deposition such as molecular-beam epitaxy (MBE), it is possible to fabricate a QWH having any desired potential shape. Two kinds of growth techniques, digital [9] and analog [13] have been used in the fabrication of nonsquare quantum wells. An inverse parabolic quantum well was fabricated experimentally in Refs.…”

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

“…Optical absorption can be modulated using several quantum well configurations including: rectangular, 1 parabolic, 5 and asymmetric triangular quantum wells ͑ATQW͒. 3 Among these quantum wells, ATQW is the most attractive structure for QSCE since this structure produces more pronounced optical effects such as absorption 6 and also demonstrates lower operating voltage ranges as well.…”