Growth of AZO/Cu/AZO multilayer structures by confocal RF magnetron sputtering and their microstructural and optoelectronic properties before and after annealing

Mendil, Djelloul; Challali, Fatiha; Touam, Tahar; Ouhenia, Salim; Boudaa, Mokhtar; Souici, Abdelhafid; Djouadi, D.; Chelouche, A.

doi:10.1016/j.mseb.2022.115889

Cited by 9 publications

(1 citation statement)

References 79 publications

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“…Figure (e) shows the room temperature PL spectra recorded under 310 nm excitation of AZO/Cu/AZO triple films with different Cu thicknesses deposited on a glass substrate. It can be seen that the spectra show two UV emission peaks at 367 nm (3.37 eV) and 396 nm (3.13 eV), which is attributed to the recombination of free excitons. ,− The spectrum presents a blue emission peak around 468 nm (2.64 eV) and a green emission peak near 558 nm (2.22 eV). Blue emission may result from the recombination of oxygen vacancies with oxygen gaps or other defects, while green emission may result from the recombination of photogenerated holes with single ionized oxygen vacancies on the surface of AZO particles.…”

Section: Experiments and Characterizationmentioning

confidence: 99%

Building an Efficient Optoelectronic Property at the AZO/Cu/AZO Heterogeneous Interface with Copper Intercalation

Wang,

Yang

2023

Crystal Growth & Design

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The AZO/Cu/AZO heterogeneous interface is prepared to improve the optoelectronic property of AZO as Cu intercalation is introduced. The experimental results show that the Cu layer is at 8 nm, the (002) peak intensity of the sample reaches the maximum, the crystallization quality is the best, the roughness is the lowest, and the transmittance and conductivity have better values. In the meantime, the simulation results show that the interface of AZO/Cu is bonded, and the conductivity of AZO/ Cu is higher than that of AZO, but the transmittance is the opposite. This is consistent with the experimental results. The research implies that we can design efficient optoelectronic properties with an AZO/Cu/AZO heterogeneous interface by adjusting Cu intercalation.

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