1985
DOI: 10.1007/bf01026309
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Growth of beta-silicon carbide whiskers by the VLS process

Abstract: Beta-silicon carbide whiskers are being grown by a vapour-liquid-solid (VLS) process which produces a very high purity, high strength single crystal fibre about 6/~m in diameter and 5-100 mm long. Details of the growth process are given along with a general explanantion of the effects of the major growth parameters on whisker growth morphology.

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Cited by 288 publications
(95 citation statements)
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“…BCNF1-7-7/2800 and BCNF2-6-7/2800, have been prepared from different BCNFs containing equal Si/Ni ratio ( Table 4). Provided that the influence of the characteristics of as-produced BCNFs on their graphitization was not remarkable (Tables 1-3), this difference can only be attributed to the amount of Si in the BCNFs available to form silicide phases that were found to finally promote the production of graphite [34,35]. In this context, the nanographitic materials with the highest graphitic degree have been obtained from the Unlike the XRD parameters, practically no variations of the materials I D /I t Raman ratio were observed by progressively increasing the metal content in the BCNFs (Table 4).…”
Section: Influence Of Bcnfs Compositionmentioning
confidence: 99%
“…BCNF1-7-7/2800 and BCNF2-6-7/2800, have been prepared from different BCNFs containing equal Si/Ni ratio ( Table 4). Provided that the influence of the characteristics of as-produced BCNFs on their graphitization was not remarkable (Tables 1-3), this difference can only be attributed to the amount of Si in the BCNFs available to form silicide phases that were found to finally promote the production of graphite [34,35]. In this context, the nanographitic materials with the highest graphitic degree have been obtained from the Unlike the XRD parameters, practically no variations of the materials I D /I t Raman ratio were observed by progressively increasing the metal content in the BCNFs (Table 4).…”
Section: Influence Of Bcnfs Compositionmentioning
confidence: 99%
“…However, the VLS mechanism proposed by Milewski et al 13) to explain the SiC whisker growth might provide us a valuable hint for this concern. In the VLS process, V is claimed to stand for ''vapour feed gas'', L for ''liquid catalyst'' and S for ''solid crystalline whisker growth''.…”
Section: 1mentioning
confidence: 99%
“…Thus, it is not quite surprising that the detected WC whiskers grew preferentially over the grain boundary by the VLS mechanism, 13) although conclusive mechanism must be decided by further systematic investigation.…”
Section: Wc Whisker Growth Site Preferencementioning
confidence: 99%
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“…This reaction should readily occur in the silica black samples, which contain intimately mixed silica and carbon. SiO formation may be followed by whisker growth, according to Reaction (3),1), 3) SiO(g)+2C(s)=SiCw+CO(g) (3) In Reactions (2) and (3), C(s) comes from the black ore (Exps. 1-3), the graphite powders (Exps.…”
mentioning
confidence: 99%