Growth of Bulk GaN Crystals

Feigelson, Boris N.; Paskova, T.

doi:10.1016/b978-0-44-453153-7.00093-6

Cited by 2 publications

(1 citation statement)

References 164 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dislocation density reported for the high Al-content AlGaN epilayers grown on the single crystalline AlN substrates (by migration enhanced metalorganic chemical vapour deposition (MEMOCVD)) are in the range of 10 6 cm −1 , 48 and further the epilayers were of excellent crystalline quality. However, unlike GaN substrate development, [49][50][51][52] the bulk AlN substrate technology is still in the development. Although bulk AlN has the highest crystalline quality, its lack of low-cost large-diameter materials is preventing it from being widely employed in commercial production of devices and cost sensitive products.…”

Section: Ultra-wide Bandgap Material-alnmentioning

confidence: 99%

Review—Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates

Sumathi

2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Aluminium nitride (AlN) crystalline substrate has emerged as a striking material and received tremendous attention for applications in high power electronics (HPE), deep-ultraviolet (DUV) light sources due to its exceptional properties. Single crystal growth of AlN by physical vapour transport (PVT) technique, and the necessity of large diameter AlN native substrates for the fabrication of HPE and DUV devices are described here. Two competing growth approaches in PVT are utilised to produce initial AlN single crystalline seeds namely, starting with self-nucleation followed by iterative homo-epitaxial growth for enlarging the crystal diameter in steps, and directly seeding on a closely lattice-matched foreign substrate of desired diameter by hetero-epitaxial growth. Both of these approaches are intended to grow bulk single crystals from which wafers might be prepared for further fabrication of devices. The hetero-epitaxial growth approach is specifically and comprehensively reviewed in this present work. A specific attention is given in using 6H- and 4H- polytype silicon carbide (SiC) substrates. The issues in hetero-epitaxially grown crystals such as presence of misfit dislocations, control of low-angle grain boundaries, incorporation of unintentional impurities, are highlighted together with the recent progress made in the achievement of about 2.5-inch dia. free-standing AlN wafer by this approach.

show abstract

Section: Ultra-wide Bandgap Material-alnmentioning

confidence: 99%

Review—Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates

Sumathi

2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

Growth of Bulk GaN from Gas Phase

Siche

Zwierz

2018

Crystal Research and Technology

View full text Add to dashboard Cite

The present status of the GaN bulk growth by vapor growth methods is reviewed and is shortly classified into all methods with bulk growth potential. The hydride vapor phase epitaxy (HVPE) as the most developed and already commercialized method using chlorine as transport agent was frequently reviewed before. However, it does not yield true bulk GaN, suffers from perfection limiting heteroepitaxy, direction depending growth rate, parasitic growth and by‐product formation, the latter both limiting the process duration. Therefore, in this review other methods are considered. Alternative transport agents are pronounced, like iodine, hydrogen, oxygen, water and the pseudo halide CN− ‐ ion, which are not able to reveal potential for bulk growth. These mostly less successful approaches, are sometimes repeated, because not adequately published.

show abstract

Growth of Bulk GaN Crystals

Cited by 2 publications

References 164 publications

Review—Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates

Review—Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates

Growth of Bulk GaN from Gas Phase

Contact Info

Product

Resources

About