1991
DOI: 10.1063/1.347398
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Growth of ceramic thin films on Si(100) using an in situ laser deposition technique

Abstract: Growth of crystalline cobalt ferrite thin films at lower temperatures using pulsed-laser deposition technique J. Appl. Phys. 107, 09A516 (2010); 10.1063/1.3357315Textured growth of cubic gallium nitride thin films on Si (100) substrates by sputter deposition

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Cited by 35 publications
(12 citation statements)
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“…For example, Tiwari et al (Fork et al 1991) reported a growth (1 1 1)-Textured MgO on Si (1 0 0) substrates from a magnesium oxide target. Also, epitaxial growth of (1 0 0)-oriented MgO on Si (1 0 0) using Mg metal target was realized by Fork et al (Tiwari et al 1991). From an application standpoint, conditions during the deposition process are extremely important because they can affect the structure of the forming film.…”
Section: Introductionmentioning
confidence: 99%
“…For example, Tiwari et al (Fork et al 1991) reported a growth (1 1 1)-Textured MgO on Si (1 0 0) substrates from a magnesium oxide target. Also, epitaxial growth of (1 0 0)-oriented MgO on Si (1 0 0) using Mg metal target was realized by Fork et al (Tiwari et al 1991). From an application standpoint, conditions during the deposition process are extremely important because they can affect the structure of the forming film.…”
Section: Introductionmentioning
confidence: 99%
“…It was concluded that the MgO film obtained in an oxygen-pressure range of 1 Â 10 À2 -1 Pa would exhibit an atomically smooth surface, which was flat enough to act as a medium epitaxy or buffer layer. In addition, compared with the results reported in literatures [1,[10][11][12][13][14][15][16], MgO film obtained in this oxygen-pressure range would be of a higher crystalline quality and smoother surface. Such a smooth surface will undoubtedly play an important role in determining the epitaxial growth of functional perovskite oxide films and thus improves performance of the Si-based integrated devices.…”
Section: Resultsmentioning
confidence: 54%
“…It is well known that PLD could generate species of high-energy in high-vacuum and thus promote epitaxial growth of oxide films at relatively low substrate temperatures. Many research groups have reported the growth of MgO on Si by PLD [1,[10][11][12][13][14][15][16], but the MgO films thus prepared were rather inferior to that of MgO single crystals. Of these films, some were grown at an extremely low oxygen-pressure and some at a high oxygen-pressure.…”
Section: Introductionmentioning
confidence: 99%
“…MgO films grown on single crystalline Si [21,26,[124][125][126][127] and GaAs [128][129][130] substrates have been investigated by many researchers. There also have been several reports on the growth of MgO films on amorphous substrates.…”
Section: Manufacturing and Production Issuesmentioning
confidence: 99%