2008
DOI: 10.1016/j.susc.2008.06.021
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Growth of cobalt on a VO(111) surface: Template, surfactant or encapsulant role of the oxide nanolayer?

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Cited by 15 publications
(28 citation statements)
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“…18 A strong adhesion energy between the metal NPs and the support was found to be on the basis of both the diffusion and encapsulation processes. Similar results were reported for other systems, like Co/VO x 19 and…”
Section: Introductionsupporting
confidence: 91%
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“…18 A strong adhesion energy between the metal NPs and the support was found to be on the basis of both the diffusion and encapsulation processes. Similar results were reported for other systems, like Co/VO x 19 and…”
Section: Introductionsupporting
confidence: 91%
“…19 The authors concluded that the balance of surface free energies drives the system towards the encapsulation of the metal overlayer by VO x . 19 The authors concluded that the balance of surface free energies drives the system towards the encapsulation of the metal overlayer by VO x .…”
Section: Discussionmentioning
confidence: 99%
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“…This mechanism has been invoked to explain the behavior of more reactive metals deposited on oxide ultrathin films, i.e. Fe on TiO x /Pt(111) 36 and Co on VO x /Rh(111), 37 where the higher reactivity of the adsorbed metals gives rise to a competition for the oxygen atoms with the metal of the oxide film (Ti, V). According to existing STM and photoemission data, the ultrathin films is either restructured 36 or displaced 37 and the deposited metal goes directly in contact to the interface with the substrate.…”
Section: Discussionmentioning
confidence: 99%
“…We have recently investigated by STM and XPS the growth of Co overlayers on a VO͑111͒ bilayer supported on a Rh͑111͒ surface. 144 The structure of the VO͑111͒ layer has been already described in Sec. III B 2 and is identical to that of FeO͑111͒ films on Pt͑111͒, thus a similar wetting behavior can be expected for this metal-on-oxide system.…”
Section: B Encapsulation Of Metals By Oxide Nanolayersmentioning
confidence: 99%