Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy

Karmann, S.; Schenk, H. P. D.; Kaiser, Ute; Fissel, A.; Richter, W.

doi:10.1016/s0921-5107(97)00168-2

Cited by 31 publications

(18 citation statements)

References 14 publications

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“…The most common techniques used for AlN growth are metalorganic vapor phase epitaxy [9,10], hydride vapor phase epitaxy [11] and molecular beam epitaxy [12,13], all requiring expensive technology and high substrate temperature. Radio frequency (RF) reactive magnetron sputtering represents an attractive low-cost technique to synthesize AlN films, allowing deposition in a wide range of temperatures and in both rigid and flexible substrates [refs.…”

Section: Introductionmentioning

confidence: 99%

Two-step method for the deposition of AlN by radio frequency sputtering

et al. 2013

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This paper presents a detailed study of the influence of deposition conditions on structural and morphological properties of AlN thin films synthesized on c-sapphire substrates by radio frequency (RF) reactive sputtering. After the optimization of deposition parameters such as RF power and substrate temperature, the substrate bias has been identified as a critical variable to improve the structural properties of the AlN layers. The use of negative bias leads to a decrease of the full-width at half-maximum (FWHM) of the rocking curve of the AlN(0002) x-ray reflection and an increase of the grain size. However, 2θ/ω x-ray scans of layers grown under negative bias reveal lattice disorder at the AlN/sapphire interface, which is attributed to the highly accelerated positive ions (Al + , N + , N 2 + ) arriving to the substrate at the initial stages of the deposition process. In order to prevent this interface degradation, we propose a twostep deposition method which consists of starting the growth with an unbiased AlN buffer layer, at least 30 nm thick, followed by AlN deposition under negative bias. This procedure results in high-quality AlN layers with FWHM of the rocking curve of the (0002) reflection of 1.63°, grain size of~40 nm and root-mean-square surface roughness of 0.4 nm.

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Section: Introductionmentioning

confidence: 99%

Two-step method for the deposition of AlN by radio frequency sputtering

et al. 2013

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“…It is characterized by interesting tribological [5] properties, high value of hardness and high thermal conductivity, moderate piezoelectricity, low dielectric and acoustic losses [6], high resistance to temperature and stability in corrosive medium [7], good heat dissipation [8], high dielectric constant, moderately high electromechanical coupling coefficient [9], low coefficient of thermal expansion [4], high elastic stiffness [2], non-toxicity [10], electrical reliability [11], light weight [12], high fusion temperature [13], high refractive index, transparence in visible light [14]. All these characteristics in combination with large optical band gap make AlN suitable for applications in high power and high frequency devices, surface acoustic wave filters, insulating [7], passivating, cladding layers [15] and optical devices (blue light emitting diodes, short wavelength lasers, ultraviolet light detectors [16], compact disks, laser diodes, phase shift lithography masks, AlN/GaN multilayer devices [17], for growth of GaN layers on Al 2 O 3 and on 6H-SiC, which are also of interest as perspective materials), electroluminescent applications over a wide wavelength range [18], acoustic-optic devices.…”

Section: Introductionmentioning

confidence: 99%

“…The studies of AlN thin film could be divided into the investigations which emphasize chemical and physical properties (mechanical, electrical, magnetic) [6,9,17,21,22], analysis of the films structure [4,7,12,15,16,19,[23][24][25]32] and combined, showing the dependences of the properties on the films morphology [2,11,13,14,26,[33][34][35]. The structure of the thin films can utterly differ from the structure of bulk material and have different structural perfection.…”

Section: Introductionmentioning

confidence: 99%

Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

Stach

Dallaeva

Ţălu

et al. 2015

Materials Science-Poland

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The aim of this study is to characterize the surface topography of aluminum nitride (AlN) epilayers prepared by magnetron sputtering using the surface statistical parameters, according to ISO 25178-2:2012. To understand the effect of temperature on the epilayer structure, the surface topography was investigated through atomic force microscopy (AFM). AFM data and analysis of surface statistical parameters indicated the dependence of morphology of the epilayers on their growth conditions. The surface statistical parameters provide important information about surface texture and are useful for manufacturers in developing AlN thin films with improved surface characteristics. These results are also important for understanding the nanoscale phenomena at the contacts between rough surfaces, such as the area of contact, the interfacial separation, and the adhesive and frictional properties.

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“…To improve the performance of these electrodevices, high quality (002) oriented AlN thin films are in demand, for their strong piezoelectricity in the (002) orientation which is along the c-axis direction. AlN films can be fabricated by different techniques, such as metal-organic chemical vapor deposition (MOCVD) [8,11], molecular beam epitaxy (MBE) [12,13], pulsed laser deposition (PLD) [14,15], and reactive magnetron sputtering [6,16]. Among these techniques, the magnetron sputtering can produce AlN films in mass at a relatively low temperature compatible with the micro-electromechanical systems (MEMS) technology [1].…”

Section: Introductionmentioning

confidence: 99%

A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films

et al. 2014

J Mater Sci: Mater Electron

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This paper proposes a new model for the longitudinal piezoelectric coefficient (LPC) measurement of the aluminum nitride (AlN) thin film on (100) Si substrate, the AlN thin film is fabricated by the direct-current magnetron sputtering and the piezoelectricity of the AlN thin film is measured by the piezoresponse force microscopy (PFM) in contact mode. In this model, the electric field distribution is taken into account, and the electrostriction displacement caused by the local field concentration is excluded from the measured displacement by the PFM. A LPC value of 4.22 ± 0.34 pm/V is obtained for the clamped AlN thin film by this model, and the deviation between this value and that measured under homogenous field condition is \5.7 %. Therefore, it is reasonable to apply our model to the piezoelectricity characterization of AlN thin films when using the PFM. Furthermore, piezoelectricity of other thin films could also be characterized using this model, which could simplify the measurement process.

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Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy

Cited by 31 publications

References 14 publications

Two-step method for the deposition of AlN by radio frequency sputtering

Two-step method for the deposition of AlN by radio frequency sputtering

Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films

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