2014
DOI: 10.1016/j.jcrysgro.2013.11.079
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Growth of crack-free ZnGeP2 large single crystals for high-power mid-infrared OPO applications

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Cited by 40 publications
(34 citation statements)
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“…Because of its high nonlinear coefficient (75 pm·V -1 ) and high thermal conductivity (35 W·m -1 ·K -1 ), it can be pumped by 2 μm laser to generate more than 30 W laser over the wavelength range of 3-5 μm. [11][12][13][14] The new promising CdSiP 2 crystal has high nonlinear coefficient (84.5 pm·V -1 ) and high transmission at 1 μm. Therefore, it can be pumped by commercially available 1 μm laser.…”
Section: Introductionmentioning
confidence: 99%
“…Because of its high nonlinear coefficient (75 pm·V -1 ) and high thermal conductivity (35 W·m -1 ·K -1 ), it can be pumped by 2 μm laser to generate more than 30 W laser over the wavelength range of 3-5 μm. [11][12][13][14] The new promising CdSiP 2 crystal has high nonlinear coefficient (84.5 pm·V -1 ) and high transmission at 1 μm. Therefore, it can be pumped by commercially available 1 μm laser.…”
Section: Introductionmentioning
confidence: 99%
“…FSP has a relatively high conductivity (35 W (m K) À1 ), which is comparable to that of the well-known mid-infrared nonlinear optical ZnGeP 2 . 40 The resistivity of FSP (0.124 U cm) is smaller than that of many other phosphorus silicides, such as RhSi 3 P 3 (0.15 U cm) and CoSi 3 P 3 (0.62 U cm), at room temperature. 8 Many researches indicate that certain kinds of transition metal phosphorus silicides have outstanding applications in integrated circuits technology because of their low resistivity and high thermal conductivity.…”
Section: Resultsmentioning
confidence: 93%
“…In previous part, crystal's inhomogeneities were outlined and solutions to improve growth process and crystal quality were presented. However, another way to improve crystal quality is to perform thermal annealing treatments post-growth process [25,52,59]. In the present work, annealing was performed under static vacuum with addition of polycrystalline powder because of volatility of GeS2.…”
Section: Thermal Annealing Treatmentsmentioning
confidence: 99%
“…The major weakness of AgGaSe2 is its low thermal shock resistance similar to AgGaS2 with a weak thermal conductivity of 1.2 W.m −1 .K −1 , which limits its use for high power applications [15,16,17,18,19,20,21,22,23]. For high power applications, ZnGeP2 is the crystal of choice due to its high thermal conductivity (35 W.m −1 .K −1 ), high nonlinear coefficient (d = 75 pm.V -1 ) and its high laser damage threshold (1.4 J.cm −2 , τ = 15 ns) [24,25,26,27,28,29,30]. It has been largely studied for counter-measure applications or remote gas sensing.…”
Section: Introductionmentioning
confidence: 99%