Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates

Kemper, Ricarda M.; Weinl, Michael; Mietze, C.; Häberlen, M.; Schupp, T.; Tschumak, E.; Lindner, J.K.N.; Lischka, K.; As, D. J.

doi:10.1016/j.jcrysgro.2010.12.042

Cited by 13 publications

(12 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The existence of states where solids are stable on top of nanopillars has then been confirmed in many experimental systems in the past 15 years, such as GaAs/Si(100) nanopillars [5], GaN/Si(100) nanopillars [6], GaN/Si nanoporous substrates [7,8], Gan/3C-SiC/Si nanopillars [9], or Ge/Si(001) nanopillars [10]. These CB states with solid particles, which have sometimes been referred to as "nanoheteroepitaxy" [11], indeed exhibit a lower density of dislocations.…”

mentioning

confidence: 85%

Wetting of Elastic Solids on Nanopillars

Ignacio¹,

Saitō²,

Smereka³

et al. 2014

Phys. Rev. Lett.

View full text Add to dashboard Cite

Solids and liquids are both known to exhibit Cassie-Baxter states, where a drop or a solid nanoparticle is maintained on top of pillars due to wetting forces. We point out that due to elastic strain, solid nanocrystals exhibit a behavior different from that of liquids. First, the equilibrium Cassie-Baxter state on a single pillar exhibits a spontaneous symmetry breaking due to elastic effects. The second consequence of elasticity is the existence of stable partially impaled states, resulting from a compromise between wetting forces which favor impalement and elastic strain which resists impalement. Based on kinetic Monte Carlo simulations which include elastic strain, we discuss these effects and we propose a global phase diagram for the stability of nanocrystals on nanopillars.

show abstract

mentioning

confidence: 85%

Wetting of Elastic Solids on Nanopillars

Ignacio¹,

Saitō²,

Smereka³

et al. 2014

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…SF distribution in the [110] zoneFirst, we consider the SF distribution in the [110] zone, in which the inclination angle for both the (-111) and(1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11) SFs is 55° with respect to the GaN/SiC interface and is not affected by the substrate miscut.…”

mentioning

confidence: 99%

Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

Lee

Frentrup

Vacek

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

X-ray diffraction and bright-field transmission electron microscopy are used to investigate the distribution and density of {111}-type stacking faults (SFs) present in a heteroepitaxial zincblende GaN epilayer with high phase purity, grown on a 3C-SiC/Si (001) substrate by metalorganic vapour-phase epitaxy. It is found that the 4° miscut towards the [110] direction of the substrate, that prevents the formation of undesirable antiphase domains, has a profound effect on the relative densities of SFs occurring on the different {111} planes. The two orientations of SFs in the [-110] zone, where the SF inclination angle with the GaN/SiC interface is altered by the 4° miscut, show a significant difference in density, with the steeper (111) SFs being more numerous than the shallower (-1-11) SFs by a factor of ~ 5 at 380 nm from the GaN/SiC interface. In contrast, the two orientations of SFs in the [110] zone, which is unaffected by the miscut, have densities comparable with the (-1-11) SFs in the [-110] zone. A simple model, simulating the propagation and annihilation of SFs in zincblende GaN epilayers, reproduces the presence of local SF bunches observed in TEM data. The model 2 also verifies that a difference in the starting density at the GaN/SiC interface of the two orientations of intersecting {111} SFs in the same zone reduces the efficiency of SF annihilation. Hence, (111) SFs have a higher density compared with SFs on the other three {111} planes, due to their preferential formation at the GaN/SiC interface caused by the miscut.

show abstract

“…The nanopatterns created this way have been used as etching mask, allowing for a transfer of the surface pattern into the third dimension, e.g. by reactive ion etching (RIE) .…”

Section: Introductionmentioning

confidence: 99%

Self-organization of nanospheres in trenches on silicon surfaces

Assion

Hilleringmann

Lindner

2013

Phys. Status Solidi A

View full text Add to dashboard Cite

The selective deposition and self‐assembly of nanospheres from a colloidal suspension in trenches on silicon surfaces is investigated using conventional light, confocal laser scanning and scanning electron microscopy. Trenches with widths of one to several nanosphere diameters are formed on silicon surfaces by photolithography and reactive ion etching. The spreading knife convective self‐assembly technique is employed to distribute the nanosphere suspension on the pre‐patterned surface. It is shown that this technique is particularly useful in combination with a functionalized surface where a self‐assembled molecular monolayer changes the contact angle such that sphere deposition takes place almost exclusively in the trenches. By this, lines selectively filled with a chain of beads with a length of 0.5 mm have been achieved.

show abstract

Growth of cubic GaN on nano-patterned 3C-SiC/Si (0 0 1) substrates

Cited by 13 publications

References 19 publications

Wetting of Elastic Solids on Nanopillars

Wetting of Elastic Solids on Nanopillars

Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

Self-organization of nanospheres in trenches on silicon surfaces

Contact Info

Product

Resources

About