Growth of CuInS2 thin films by sulphurisation of Cu–In alloys

Antony, Aldrin; Asha, A.S.; Yoosuf, Rahana; Manoj, Reema; Jayaraj, M. K.

doi:10.1016/j.solmat.2003.11.025

Cited by 56 publications

(33 citation statements)

References 15 publications

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“…Some studies of Cu(In,Al)Se2 (CIAS), CuGaSe2 (CGS) and Cu(In,Ga)Se2 (CIGS) thin films on transparent coated oxide (TCO) substrates obtained great results with efficiencies around 15% [4][5][6][7]. Several methods of deposition of CuAlSe2 thin films [8][9][10][11][12][13][14][15][16][17][18][19][20][21]. CBD method is preferred for its simplicity, inexpensive and capability to achieve large surface area coatings [16].…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of Copper Aluminium Diselenide Thin Films under the Influence of Ammonium Solution as pH Adjuster

Ezike¹

2018

JTFR

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Due expensive nature of silicon solar cells with indirect energy band gap, low-cost fabricated chalcogenide thin films are in focus. Copper Aluminium diselenide (CuAlSe2) compound thin films are prepared by chemical bath deposition (CBD) technique. The films were deposited onto microscope glass slide (7.5 cm x 2.5 cm x 0.1 cm) in which influence of ammonium solution as pH adjuster is studied. The optical properties of deposited films were studied using UV-Vis spectrophotometer and results showed that the films thicknesses decrease as the volume ammonium solution increase which resulted in hindering films deposition an as well affected the energy band gaps (2.3 eV to 3.0 eV) of the deposited films as pH values decrease. The pH played important role during the deposition process by affecting the optical properties of the films. This material is good candidate for optoelectronic properties by having moderate transmission in visible region of the spectrum and good UV filter since it absorbs higher in ultraviolet region.

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Section: Introductionmentioning

confidence: 99%

Optical Properties of Copper Aluminium Diselenide Thin Films under the Influence of Ammonium Solution as pH Adjuster

Ezike¹

2018

JTFR

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“…The direct energy gap of CIS results in large absorption coefficient, which in turn permits the use of thin layers (1-2 lm) of active materials. CIS based solar cells are also known for their long term opto-electronic stability and ability to undergo band-gap engineering (from 0.9 to 1.6 eV) by alloy formation like replacement of Se by S or by doping Ga and Al [2,3]. Recently, the laboratory scale and module efficiency of CIGS based devices reached to 21.7 and 15.7 %, respectively [4].…”

Section: Introductionmentioning

confidence: 99%

Study of electrochemically grown copper indium diselenide (CIS) thin films for photovoltaic applications

Rohom

Londhe

Bhand

et al. 2016

J Mater Sci: Mater Electron

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CIS thin films have been grown electrochemically from an aqueous electrolyte at room temperature on fluorine doped tin oxide coated glass substrate at different deposition potentials ranging from -0.7 to -1.0 V versus Ag/AgCl reference electrode. Cyclic voltammetry was studied at slow scan rate to optimize the deposition potential. The thin film samples were selenized in a tubular furnace at 400°C for 20 min. X-ray diffraction and Raman analysis was used to study the structural properties. Optical absorption, scanning electron microscopy and energy dispersive X-ray analysis (EDAX) have been used to investigate the band-gap, surface morphology and compositional analysis. Electrical properties were studied with the help of current-voltage measurements. Conductivity type for CIS thin films was studied by using photo-electrochemical study. The prominent reflections (112), (204/220) and (312/ 116) of tetragonal chalcopyrite CIS have been revealed for all as-grown and selenized samples. The energy band gap of the selenized CIS thin film deposited at various deposition potentials was found to be *1.03 to 1.24 eV. Granular, uniform and void free surface was observed in as-prepared sample, while large clusters were noticed in selenized samples. EDAX results reveal that the stoichiometric CIS thin film are deposited -0.8 V, however, Curich and In-rich CIS layers were grown at lower and higher cathodic deposition potentials, deviated from -0.8 V. The values ideality factor (g) calculated from I-V measurements were found to be decreased upon selenization. The Raman spectra of stoichiometric CIS thin film shows dominant A1 mode with spectral features sensitive to the microcrystalline quality of the layers. A ordered defect compound layer and secondary phases of CuSe are observed in In-rich and Cu-rich CIS layers, respectively.

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“…CIS was obtained after 2 h of sulfurization in an H 2 S atmosphere at 250°C according to the following proposed reaction: Cu 11 In 9 + H 2 S ? CuS + CuInS 2 + H 2 [9]. Another proposed reaction for the formation of CIS at 400°C reads 6Cu 16 In 9 + 150H 2 S ?…”

Section: Introductionmentioning

confidence: 99%