Growth of epitaxial Bi0.5(Na1-K )0.5TiO3 films by hydrothermal reaction time and their characterization

Kim, Eun-Young; Cho, Sam Yeon; Wi, Sang Won; Lee, Yun Sang; Han, Jin Kyu; Bu, Sang Don

doi:10.1016/j.cap.2023.11.012

Current Applied Physics

2024

DOI: 10.1016/j.cap.2023.11.012

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Growth of epitaxial Bi0.5(Na1-K )0.5TiO3 films by hydrothermal reaction time and their characterization

Eun-Young Kim,

Sam Yeon Cho,

Sang Won Wi

et al.

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Cited by 2 publications

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Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics

Han,

Cho,

2025

Current Applied Physics

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Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics

Han,

Cho,

2025

Current Applied Physics

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Defect Engineering of Ferroelectric Hysteresis in Lead-Free Bi_1/2(Na,K)_1/2TiO₃ Thin Films

Sheeraz,

Tran,

et al. 2024

ACS Appl. Electron. Mater.

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Exotic physical phenomena in solids emerge with changes of nonlinear responses (e.g., polarization hysteresis under an electric field) of order parameters to external stimuli. In epitaxial ferroelectric films, polar ordering states of electric dipole moments cooperate with local disorder originating from thicknessdependent mitigation of misfit strain inherently and/or chemical off-stoichiometry extrinsically. The mutual interaction of electric polarization with both intrinsic and extrinsic factors in ferroelectric thin films produces sizable modification of ferroelectric hysteretic characteristics. Herein, we demonstrate defect-induced manipulation of ferroelectric hysteresis in epitaxial Bi 1/2 (Na,K) 1/2 TiO 3 films. Notably, pinched hysteresis loops and linked double switching current behaviors are observed with the formation of screw dislocations on the surfaces of lead-free ferroelectric films grown at high temperatures. Plausibly, structural transitions of tetragonal phases to rhombohedral-like monoclinic symmetry driven by Na enrichment enable the appearance of ferroelastic domain variants, of which screw dislocations can be created to accommodate local stress at the boundaries. Polarization switching at the dislocation-mediated ferroelastic domain walls has been also limited and thereby, single ferroelectric hysteresis loops evolve to double-like hysteresis loops. Our result of defect-engineered ferroelectric hysteresis is of potential interest for designing advanced electronic devices such as functional energy storage and harvesters with high performance.

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Growth of epitaxial Bi0.5(Na1-K )0.5TiO3 films by hydrothermal reaction time and their characterization

Cited by 2 publications

References 37 publications

Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics

Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics

Defect Engineering of Ferroelectric Hysteresis in Lead-Free Bi_1/2(Na,K)_1/2TiO₃ Thin Films

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Growth of epitaxial Bi0.5(Na1-K )0.5TiO3 films by hydrothermal reaction time and their characterization

Cited by 2 publications

References 37 publications

Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics

Effect of calcination temperature on the microstructure and energy storage performance of bismuth layer-structured relaxor ferroelectric BaBi2Nb2O9 ceramics

Defect Engineering of Ferroelectric Hysteresis in Lead-Free Bi1/2(Na,K)1/2TiO3 Thin Films

Contact Info

Product

Resources

About

Defect Engineering of Ferroelectric Hysteresis in Lead-Free Bi_1/2(Na,K)_1/2TiO₃ Thin Films