Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua-Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching-Ting; Chang, Edward Yi

doi:10.1016/j.jcrysgro.2018.09.046

Cited by 8 publications

(7 citation statements)

References 64 publications

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“…We can clearly see the In droplet on the top of NW, the InSb QD with larger diameter and the InAs stem with uniform diameter. The InSb QD shows the same kind of side facets of the InAs stem (i.e., {110} [ 8 , 46 ]). The other NWs depicted in panel (a) are representative SEM images of InSb/InAs QD NWs where the InAs top segment was grown at different temperatures, T InAs , as indicated in the figure.…”

Section: Resultsmentioning

confidence: 99%

Self-Catalyzed InSb/InAs Quantum Dot Nanowires

et al. 2021

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The nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy. A systematic variation of the growth parameters for the InAs top segment has been investigated and the resulting nanowire morphology analyzed. We found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment. As a consequence, we can reduce the InAs shell thickness around the InSb quantum dot by increasing the InAs growth temperature. Moreover, we observed that both axial and radial growth rates are enhanced by the As line pressure as long as the In droplet on the top of the nanowire is preserved. Finally, the time evolution of the diameter along the entire length of the nanowires allowed us to understand that there are two In diffusion paths contributing to the radial InAs growth and that the interplay of these two mechanisms together with the total length of the nanowires determine the final shape of the nanowires. This study provides insights in understanding the growth mechanisms of self-catalyzed InSb/InAs quantum dot nanowires, and our results can be extended also to the growth of other self-catalyzed heterostructured nanowires, providing useful guidelines for the realization of quantum structures with the desired morphology and properties.

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Section: Resultsmentioning

confidence: 99%

Self-Catalyzed InSb/InAs Quantum Dot Nanowires

et al. 2021

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“…This In-rich In-Sb alloy droplet accumulation is attributed to low incorporation efficiency of Sb in droplet and poor cracking efficiency of low vapor pressure TMSb precursor. 29 When the TMIn flow increases (samples-G), InSb nucleation still happens and droplet size is found to increase, is shown in Fig. 5b.…”

Section: Sae-inas Nw-figuresmentioning

confidence: 85%

“…SAE-InAs/InSb HS NW.-All SAE-InAs NW stems were grown with the V/III ratio of 264 at a fixed growth temperature of 550 °C (the density of selectively grown NWs is very low due to the memory effect of TMSb inside the chamber). 29,30 Figures 6a-6d shows 45°SEM images of InAs/InSb HS NW of samples F to I. For the V/III ratio of 2.5, In-rich growth regime tends to form In-(antimony) Sb alloy droplet at the growth front of the InAs stem.…”

Section: Sae-inas Nw-figuresmentioning

confidence: 99%

Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD

Anandan

Lee

et al. 2021

ECS J. Solid State Sci. Technol.

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The effect of III-V molar flow scaling on crystal quality of selectively grown InAs nanowires on patterned Si (111) substrate is investigated by metal organic chemical vapor deposition. We found the correlations between molar flow rate scaling and selectivity and InAs crystal structure have been investigated. When the molar flow rate is higher, nanowire follows random nucleation and exhibits zincblende crystal structure, whereas growth selectivity increases to 97% at intermediate molar flow rates and nanowire exhibits wurtzite dominant crystal phase with occasional stacking faults. Once the molar flow rate is scaled-down aggressively, nanowire exhibits polytype crystal structure with small degradation in selectivity. The resistivity calculated from current-voltage curve of moderate molar flow rate InAs nanowires showed 15.9 × 10 -3 Ωcm, which was significantly (1.6 times) lower than typical InAs nanowires with low molar flow rate (25.31 × 10 -3 Ωcm). Finally, we integrate axial InSb heterostructure nanowire with two different crystal structures on InAs stem by self-catalyzed selective area epitaxy for the V/III ratio of 2. This study further offers good opportunity to tune the crystal structure of InSb with the help of In-catalyzed growth technique.

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“…It is difficult to nucleate InSb NWs directly on a dissimilar substrate, which is why they are often grown on InAs NW stems [12]. Furthermore, the top InSb segment rapidly widens with respect to InAs stem [6][7][8][9][10][11][12][13]. Similar effect is observed for ternary InAsSb segments [14,15].…”

Section: Introductionmentioning

confidence: 91%

“…Unfortunately, however, epitaxial growth of InSb in the form of two-dimensional layers is challenging due to its large lattice mismatch with common semiconductor substrates [3,4]. There have been many efforts to grow InSb in the form of nanowires (NWs) on both on InSb substrates [5] and on lattice-mismatched substrates such as Si and InAs [6][7][8][9][10][11][12][13], which enables a radical improvement of its crystalline quality and may pave new ways to fabricate InSb-based devices. Despite this progress, it is admittedly challenging to maintain the necessary control over the morphology and dimensions of InSb NWs, and many fundamental aspects of their growth and related properties are not yet fully understood.…”

Section: Introductionmentioning

confidence: 99%

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

et al. 2020

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The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.

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Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Cited by 8 publications

References 64 publications

Self-Catalyzed InSb/InAs Quantum Dot Nanowires

Self-Catalyzed InSb/InAs Quantum Dot Nanowires

Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

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Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Cited by 8 publications

References 64 publications

Self-Catalyzed InSb/InAs Quantum Dot Nanowires

Self-Catalyzed InSb/InAs Quantum Dot Nanowires

Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory

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Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD