2006
DOI: 10.1016/j.jcrysgro.2005.10.101
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Growth of Ga(1−x)InxSb alloys by Vertical Bridgman technique under alternating magnetic field

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Cited by 30 publications
(26 citation statements)
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(14 reference statements)
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“…The obtained dopant concentration distribution along the crystals shows some oscillations of the ions concentration. This behavior have been also observed for other crystals grown by Bridgman technique and was not explained yet [3,9].…”
Section: Resultsmentioning
confidence: 59%
“…The obtained dopant concentration distribution along the crystals shows some oscillations of the ions concentration. This behavior have been also observed for other crystals grown by Bridgman technique and was not explained yet [3,9].…”
Section: Resultsmentioning
confidence: 59%
“…The dopant distribution along the crystals shows some oscillations of the Pb 2+ -ions concentration. These types of oscillations have been also observed for other crystals grown by the Bridgman technique; this behavior has not been explained yet [16,17]. For concentrations ≤ 1 mol% the absorption coefficient increases along the crystals and consequently, the concentration increases, too.…”
Section: Determination Of the Effective Segregation Coefficient Of Pbmentioning
confidence: 78%
“…The use of an alternating magnetic field located in the vicinity of the solid-liquid interface [3], of an internal baffle moving at a constant distance from the interface [4] or the double crucible Czochralski technique [5] have been proposed with the aim of preserving the characteristic of the liquid (concentration, temperature) in a thin layer close to the Solid/Liquid interface, allowing to improve the materials homogeneity. With these methods, most of the melt is used as a feed for the thin liquid layer and a special design is required to limit the interactions between the thin layer and the remaining melt [6].…”
Section: Principle Of Feeding Techniquesmentioning
confidence: 99%