Growth of Ga1−xAlxSb and Ga1−xInxSb by organometallic chemical vapor deposition

Bougnot, G.; Foucaran, A.; Marjan, M.; Etienne, D.; Bougnot, J.; Delannoy, F.; Roumanille, F.

doi:10.1016/0022-0248(86)90330-1

Cited by 35 publications

(9 citation statements)

References 10 publications

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“…Our result is similar to, but slightly higher than, that reported by Bougnot et aL (14). The variation was previously explained as: the GaSb growth rate is thermally activated for T < 600~ whereas the InSb growth rate seems to be constant in the same range (13,14). So, at low growth temperature, the GaSb solid mole fraction decreased and InSb solid mole fraction increased.…”

Section: Resultssupporting

confidence: 89%

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The Effects of Growth Pressure and Substrate Temperature upon In x Ga1 − x Sb Epilayer Quality Grown by MOCVD

Juang

1992

J. Electrochem. Soc.

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In=Ga~_=Sb epitaxial layers have been grown on (100) GaSb substrates. The effects of growth pressure and substrate temperature on epilayer quality and indium solid composition were examined using x-ray diffraction patterns and photoluminescence (PL) measurements. Mirror-like surfaces can be obtained at growth pressure 170 Torr and substrate temperature 600~ The x-ray diffraction pattern degraded and the PL intensity decreased when the growth pressure increased above 200 Torr. The indium solid composition was found to decrease with increasing growth temperature. This result was compared with that grown under atmospheric pressure reported by Bougnot et al. (13). The indium distribution coefficients (the ratio of solid to vapor-phase composition) as a function of growth pressure and substrate temperature have been studied. The full width at half m a x i m u m of 10 K photoluminescence peaks was found to increase with increasing lattice mismatch.Gallium-antimonide based compound semiconductors are suitable materials for low-noise avalanche photodiodes (APDs) and long wavelength laser diodes and photodetectors in the 1.7-4.3 ~m range (1-3), where fluoride-based optical fibers have extremely low transmission losses (4, 5). In addition, In=Gal_=Sb alloys could be used in low field G u n n effect devices with microwave oscillations (6-9). The In=Gal_=Sb crystals were first obtained from Bridgeman ingots and the 80 and 300 K bandgap variations vs. composition were determined by Auvergne et al, (7) in 1974. The epitaxial growth of In=Gaz-=Sb thin films by multitarget RF sputtering was reported by Greene et al. in 1976 (8). Recently, metal organic chemical vapor deposition (MOCVD) growth of GaSb (9-12) and GaInSb (13-15), characterization of GaSb/InGaSb p-n photodiodes ( 14) and quantum well structures of GaSb/InGaSb ( 16) have been studied. Chow et al. (17) have reported the successful molecular beam epitaxy (MBE) growth of InAs/In=Gaj_=Sb strained-layer superlattices, which have been proposed for far-infrared applications (18,19). In this paper, we reported the effects of growth pressure and substrate temperature on MOCVDgrown In=Gal_~Sb epitaxial quality and the variation of In solid composition with growth temperature.

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Section: Resultssupporting

confidence: 89%

“…This variation of In solid composition with growth temperature is different from that of A1 in GaSb sub. Al~Ga~_=Sb alloys in which both A1Sb and GaSb growth rate are thermally activated for T < 600~ (13).…”

Section: Resultsmentioning

confidence: 99%

The Effects of Growth Pressure and Substrate Temperature upon In x Ga1 − x Sb Epilayer Quality Grown by MOCVD

Juang

1992

J. Electrochem. Soc.

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“…1 Precursors successfully used in M-Sb (M ) Al, Ga, In) films include Sb(CH 3 ) 3 , Sb(C 2 H 5 ) 3 , Sb(CH 3 ) 2 (t-C 4 H 9 ), and Sb[(CH 3 ) 2 N] 3 . 5,[8][9][10][11][12][13] Longer hydrocarbons are of interest because the Sb-C bond strength decreases with increasing ligand size, 1 but they are practically limited by the concurrent decrease in the volatility of the precursor.…”

Section: Introductionmentioning

confidence: 99%

“…Groups III−V thin film materials are of considerable interest because they are semiconductors suited to a wide range of micro- and optoelectronics applications. − Antimony-containing materials, such as InSb, GaSb, and GaInAsSb, exhibit the smallest band gap of this class of semiconductors, making them good infrared detectors. , The synthesis of suitable antimony precursors has been of particular interest, as candidates such as SbH 3 decompose at room temperature, whereas Sb(CH 3 ) 2 (H) is unstable above −78 °C . Precursors successfully used in M−Sb (M = Al, Ga, In) films include Sb(CH 3 ) 3 , Sb(C 2 H 5 ) 3 , Sb(CH 3 ) 2 ( t -C 4 H 9 ), and Sb[(CH 3 ) 2 N] 3 . ,− Longer hydrocarbons are of interest because the Sb−C bond strength decreases with increasing ligand size, but they are practically limited by the concurrent decrease in the volatility of the precursor.…”

Section: Introductionmentioning

confidence: 99%

BAC-MP4 Predictions of Thermochemistry for Gas-Phase Antimony Compounds in the Sb−H−C−O−Cl System

Allendorf

Melius

2006

J. Phys. Chem. A

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Calibrated by both experimental data and high-level coupled-cluster calculations, the BAC-MP4 methodology was applied to 51 SbL(n) (L = H, CH(3), C(2)H(5), Cl, and OH, n = 1-5) molecules, providing calculated heats of formation and associated thermodynamic parameters. These data identify a linear variation in heats of formation with ligand substitution, trends in bond dissociation energies (BDEs) with ligand identity [BDE(Sb-C(2)H(5)) < BDE(Sb-CH(3)) < BDE(Sb-H) < BDE(Sb-Cl) < BDE(Sb-OH)], and a monotonic decrease in BDE upon successive ligand elimination. The linear variation in BDE is consistent with the behavior of other group V elements, in contrast to the characteristic high-low-high trend of adjacent group III (In) and group IV (Sn) elements. Additionally, these data complement those of previous studies of metal-organic species and provide a foundation of thermochemical data that can aid in the selection of CVD precursors and deposition conditions for the growth of antimony-containing materials.

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“…In the known MOCVD process, AlSb and related compounds were formed by reaction of group III element alkyls such as Me 3 Al, [10,11,13,15,16] t Bu 3 Al, [12,14] and Me 3 -NAlH 3 [7] with group V alkyls such as Me 3 Sb [7,12] and Et 3 Sb.…”

Section: Introductionmentioning

confidence: 99%

First Approach to an AlSb Layer from the Single-Source Precursors [Et2AlSb(SiMe3)2]2 and (iBu2AlSb(SiMe3)2]2

Park

Schulz

Wessel

et al. 1999

Chem. Vap. Deposition

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AlSb films have been grown on Si (100) (2) without any carrier gas. The best condition for a high quality AlSb film depends on the ligands of the precursor. The AlSb film is deposited at a temperature about 50 C lower when precursor 1 is used instead of 2. The films are consistent with the 1:1 stoichiometry in the optimized temperature range of 375±425 C for 1 and 425±475 C for 2, whereas at other temperatures the films are contaminated with Si. The deposition rate is mainly kinetics limited and ranges from 5 to 9 mm/h. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray spectrometry (EDS), and wavelength dispersive spectrometry (WDS) were used to characterize the films.

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Growth of Ga1−xAlxSb and Ga1−xInxSb by organometallic chemical vapor deposition

Cited by 35 publications

References 10 publications

The Effects of Growth Pressure and Substrate Temperature upon In x Ga1 − x Sb Epilayer Quality Grown by MOCVD

The Effects of Growth Pressure and Substrate Temperature upon In x Ga1 − x Sb Epilayer Quality Grown by MOCVD

BAC-MP4 Predictions of Thermochemistry for Gas-Phase Antimony Compounds in the Sb−H−C−O−Cl System

First Approach to an AlSb Layer from the Single-Source Precursors [Et2AlSb(SiMe3)2]2 and (iBu2AlSb(SiMe3)2]2

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