Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

Saidov, A. S.; Saidov, M. S.; Usmonov, Sh. N.; Leiderman, A. Yu.; Kalanov, M. U.; Gaimnazarov, K. G.; Kurmantaev, A. N.

doi:10.1134/s1063783411100271

Cited by 8 publications

(1 citation statement)

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“…Generally, the quaternary alloy involving both III-V and II-VI compounds usually can be taken as a pseudobinary alloy with a form of (III-V) x (II-VI) 1Àx . 28,29,31 If this is the case, the chemical formula of our quaternary alloy nanowires would be (GaAs) x (ZnSe) 1Àx , and the Ga and Zn contents are approximately equal to those of As and Se, respectively. However, in our experiments, the contents of Ga and Se were always greater than those of As and Zn (Fig.…”

Section: Resultsmentioning

confidence: 98%

Bandgap broadly tunable GaZnSeAs alloy nanowires

Wang

Ren

et al. 2013

Phys. Chem. Chem. Phys.

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Composition-tunable semiconductor alloy nanowires are emerging as an important class of materials for the realization of high-performance laterally-arranged multiple bandgap (LAMB) solar cells. Here we report the first growth of GaZnSeAs quaternary alloy nanowires with composed elements between two different groups using a temperature/space-selective CVD route. Under laser excitation, these special quaternary alloy nanowires exhibit composition-related characteristic emissions, with peak wavelengths gradually tunable from 470 nm (2.64 eV) to 832 nm (1.49 eV), covering almost the entire visible spectrum. Surface photovoltage measurements further reveal that these alloy nanowires have tunable bandgaps along the length of the substrate, making them promising candidates for developing high-efficiency LAMB solar cells. These quaternary alloy nanowires represent a new advancement in material synthesis and would have potential applications in a variety of function-tunable and broadband-response optoelectronic devices.

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Section: Resultsmentioning

confidence: 98%

Bandgap broadly tunable GaZnSeAs alloy nanowires

Wang

Ren

et al. 2013

Phys. Chem. Chem. Phys.

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Growing the solid solution of molekular substitution (GaAs)_1-z(ZnSe)_z

Saidov

Saparov

Usmonov

et al. 2021

IOP Conf. Ser.: Mater. Sci. Eng.

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Epitaxial layers of semiconductor solid solutions of molecular substitution (GaAs)1-z(ZnSe)z (0 < z < 0.80) with a smoothly (but not monotonously) varying composition were obtained from the liquid phase on monocrystal GaAs (100) substrates. The solubility of gallium arsenide and zinc selenide in tin and the phase diagrams of binary systems Ga-Sn, As-Sn, Zn-Sn and Sn-Se indicate that binary compounds in the tin solvent at temperatures of 650–750°C, below the melting point of the corresponding materials, are not in the form of individual atoms of gallium, arsenic, zinc and selenium, but in the form of molecules of gallium arsenide and zinc selenide. Moreover, in the temperature range 650-750°C, the solubility of GaAs in tin varies from ∼ 2.6 to ∼ 5.5 mol%, and ZnSe - from ∼ 0.2 to ∼ 0.35 mol%, the solubility of gallium and zinc is unlimited, and the solubility of arsenic is more than 70 at. %, selenium - more than 5 at.%. It is shown that due to the difference in the valence of gallium and arsenic atoms, the forces of chemical bonds between neighboring Ga and As atoms located in the tetrahedral lattice are not the same. In the tetrahedral lattice, each Ga atom forms 4 bonds with four neighboring As atoms, three of which are formed by the sharing of electrons of neighboring Ga and As atoms, and the fourth one only due to the two valence electrons of the As atom. Apparently, the ionic fraction of the fourth chemical bond is stronger than the other three.

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