Growth of gallium nitride nanowires on sapphire and silicon by chemical vapor deposition for water splitting applications

Loganathan, R.; Kuppulingam, B.; Panigrahi, Puspamitra; Baskar, K.

doi:10.1016/j.apsusc.2018.01.306

Cited by 30 publications

(9 citation statements)

References 48 publications

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“…1 related to the literature. 19,20 Dominant three diffraction peaks are located between 30°and 40°. Therewithal, grazing incident-angle XRD patterns of samples showed amorphous-like graphene structure which broad peaks near 24°and 44°centers related to the literature.…”

Section: Resultsmentioning

confidence: 99%

The Effect of Annealing Process on Some Physical Properties of GaN Thin Films with Gr Doping

Özen

Pat

Korkmaz

et al. 2021

ECS J. Solid State Sci. Technol.

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This study aims to ensure p-type gallium nitride (GaN) thin-film production through graphene (Gr) and to observe the effects of the annealing process on physical properties. A Gr doped GaN thin film on a glass substrate was coated using the thermionic vacuum arc method and an annealing process was applied to this sample at separate temperatures of 300 °C and 400 °C. To investigate the produced samples, elemental composition, electronic states, nanostructural, morphological, and electrical characteristics were determined by X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and Hall effect technique. The thickness of the samples was determined as 60 nm by a Filmetrics F20 thin film analyzer. According to grazing incident-angle XRD patterns of samples, GaN peaks were observed to become dominant after the 400 °C annealing process. The results show that the used production method is suitable for p-type GaN thin film.

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Section: Resultsmentioning

confidence: 99%

The Effect of Annealing Process on Some Physical Properties of GaN Thin Films with Gr Doping

Özen

Pat

Korkmaz

et al. 2021

ECS J. Solid State Sci. Technol.

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“…However, one-dimensional nanomaterials have more unique electronic and optical properties, which are more conducive to improve the performance of the ultraviolet detector. There are various methods to grow GaN nanowires(NWs), including metal-organic chemical vapor deposition (MOCVD) [7,8], molecular beam epitaxy (MBE) [9][10][11][12][13], and chemical vapor deposition (CVD) [14][15][16][17][18][19][20][21][22][23]. Among these methods, CVD is the most effective method to synthesize nanowires.…”

Section: Introductionmentioning

confidence: 99%

“…CVD method has great flexibility in the synthesis of GaN nanowires. Ga 2 O 3 or metal gallium is commonly used as source materials [2,14]. Si and sapphire are used as a substrate for deposition.…”

Section: Introductionmentioning

confidence: 99%

Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

Ding

Meng

2020

Rev. Mex. Fís.

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Serrated GaN nanowires were synthesized on sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An UV detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has different response under different wavelength light illumination and has the maximum response under 365nm ultraviolet light. Photocurrent–time characteristics show the detector has good stability over time.

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“…Because of their reduced dimensions, these nanostructures can minimize the presence of dislocations and piezoelectric polarization fields . Because they alleviate the lattice-matching constraint, defect-free structures can grow on a variety of substrates. − Moreover, nanostructures offer reduced optical losses, suppressed carrier recombination, improved carrier extraction, and increased reactive surface area. Significant enhancements in current densities and/or H 2 evolution rates have been demonstrated with GaN-based nanostructures over their planar counterparts: 7-fold increase with GaN nanorod arrays, 2-fold with GaN nanopillars, 57% with InGaN nanowalls, and 4-fold with nanoporous InGaN/GaN structures .…”

mentioning

confidence: 99%

III–V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects

et al. 2020

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Following recent developments in photoelectrochemical and photovoltaic–electrosynthetic systems, we present the benefits of III–V semiconductors for solar water splitting. In addition to their interesting light absorption and carrier transport properties, III–V alloys and multijunction structures enable the highest solar-to-hydrogen conversion efficiencies. However, many obstacles still stand in the way of practical realization of III–V solar water-splitting systems. Various surface protection strategies are being developed to address the instability of III–V semiconductors in an electrolyte. Meanwhile, multiple cost-reduction approaches are being implemented, including the use of solar concentration, epitaxial lift-off or spalling for substrate reuse, and monolithic or heterogeneous integration on silicon substrates. All these advances make III–V photoabsorbers a promising route toward decarbonated hydrogen production and pave the way to long-term deployment in real-world applications.

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Growth of gallium nitride nanowires on sapphire and silicon by chemical vapor deposition for water splitting applications

Cited by 30 publications

References 48 publications

The Effect of Annealing Process on Some Physical Properties of GaN Thin Films with Gr Doping

The Effect of Annealing Process on Some Physical Properties of GaN Thin Films with Gr Doping

Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

III–V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects

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