Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method

Kim, Hyoun Woo; Kim, Nam Ho

doi:10.1016/j.mseb.2004.01.012

Cited by 75 publications

(18 citation statements)

References 25 publications

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“…[19][20][21] Despite great promise, studies on b-Ga 2 O 3 are rather scarce compared to other well explored wide band gap oxides. For thin films grown using either physical or chemical vapor deposition methods, properties and phenomena of b-Ga 2 O 3 films depend on the processing conditions such as base pressure, 9 growth temperature, [22][23][24] reactive pressure (if any), deposition rate, and annealing conditions. Therefore, the controlled growth and manipulation of b-Ga 2 O 3 at nanoscale dimensions has important technological implications.…”

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confidence: 99%

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Ramana¹,

Rubio²,

Barraza³

et al. 2014

Journal of Applied Physics

162

112

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Comparative study between erbium and erbium oxide-doped diamondlike carbon films deposited by pulsed laser deposition technique Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films Gallium oxide (Ga 2 O 3 ) thin films were made by sputter deposition employing a Ga 2 O 3 ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (T s ), from 25 to 600 C. The effect of T s on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p 3/2 and Ga 2p 1/2 peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga 3þ ) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE $ 531 eV, which is also characteristic of Ga-O bonds in the Ga 2 O 3 phase. The granular morphology of the nanocrystalline Ga 2 O 3 films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing T s . The SE analyses indicate that the index of refraction (n) of Ga 2 O 3 films increases with increasing T s due to improved structural quality and packing density of the films. The n(k) of all the Ga 2 O 3 films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high ($200 X-cm) for amorphous Ga 2 O 3 films grown at T s ¼ RT-300 C and decreased to $1 X-cm for nanocrystalline Ga 2 O 3 films grown at T s ! 500-600 C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga 2 O 3 films is derived. V C 2014 AIP Publishing LLC.

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confidence: 99%

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Ramana¹,

Rubio²,

Barraza³

et al. 2014

Journal of Applied Physics

162

112

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“…2 shows the XRD patterns of as grown and 500 to 800 °C annealed 20 nm Ga2O3 thin films deposited on Si substrate. The strong 2θ peak at ~ 69.132 o corresponds to the (0 0 4) peak of Si [9]. For the film annealed at 500 °C, a weak 2θ peak ~ 77.441 o corresponding to the (1010) peak of β-Ga2O3 (JCPDS 11-370) emerged, suggesting that the crystallisation process had started.…”

Section: Methodsmentioning

confidence: 99%

Experimental and Theoretical Validation of Ga₂O₃ Thin Films Deposited by Physical Vapor Deposition

Lai

Badiei

Deng

et al. 2019

2019 International Semiconductor Conference (CAS)

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In this work, we have shown that betagallium oxide (Ga2O3) thin films of differing thickness could be obtained by physical vapor deposition method, employing proper annealing conditions. These enable us to compare the variation of optical properties like transparency, band gap in these phases. Apart from these, our analysis of transmittance spectra of beta-Ga2O3 indicated the reduction of structural disorders (amorphous to crystalline) with increase in annealing temperature. The calculated band gap based on Density Functional Theory (DFT) for bulk beta-Ga2O3 thin films ~ 4.9 eV (direct) at room temperature is in excellent agreement with our experimentally measured values. This work will serve as design guidance for the new Ga2O3 based thin film electronics.

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“…Ga 2 O 3 nanostructures have a high surface area-to-volume ratio. There are several synthetic approaches to prepare these nanostructures such as laser ablation [20,21], molecular beam epitaxy [22], chemical vapor deposition [23][24][25], hydrothermal treatment [26][27][28][29] and plasma-assisted growth methods [30]. Ga 2 O 3 synthesis, in the liquid phase, is usually preceded by GaOOH formation that leads, finally, to Ga 2 O 3 crystals.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Nanostructure of Gallium Oxide Catalysts on Conversion in the Green Synthesis of Carbamates

Shah

Ratnasamy²,

Carreon

2017

Catalysts

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Abstract:The nanostructure of β-gallium oxide crystals influences the conversion to carbamates; specifically, for the synthesis of alkyl carbamates (like propyl N-octylcarbamate) from CO 2 and n-propanol in the absence of phosgene. The nanostructures with variable aspect ratios (length (L)/width (D); from 2 to 18) were prepared by the controlled addition of neutral and cationic surfactants during gallium oxide synthesis. These catalysts displayed selectivities to the corresponding carbamates as high as~70%, superior to non-nanostructured Ga 2 O 3 catalysts. The conversion was found to be inversely proportional to the square of the relative crystallinity. The catalysts retained their structure and catalytic performance upon recycling.

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Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method

Cited by 75 publications

References 25 publications

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Experimental and Theoretical Validation of Ga₂O₃ Thin Films Deposited by Physical Vapor Deposition

Influence of the Nanostructure of Gallium Oxide Catalysts on Conversion in the Green Synthesis of Carbamates

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Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method

Cited by 75 publications

References 25 publications

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Experimental and Theoretical Validation of Ga2O3 Thin Films Deposited by Physical Vapor Deposition

Influence of the Nanostructure of Gallium Oxide Catalysts on Conversion in the Green Synthesis of Carbamates

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Experimental and Theoretical Validation of Ga₂O₃ Thin Films Deposited by Physical Vapor Deposition