Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient

Zhou, Mingbin; Li, Zhenrong; Jingsi, Li; Song, Fan; Wang, Chao

doi:10.1007/s11664-014-2996-6

Cited by 9 publications

(5 citation statements)

References 15 publications

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“…Figure 8(a) illustrates that under conditions of a positive temperature gradient (where the temperature at the top of the crucible is higher), the maximum concentration of GaN solute is found near the gas‐liquid interface. This is a significant observation as it provides insights into the distribution of GaN solute in the solution under varying temperature conditions [69] . In scenarios where temperature gradients are either absent or minimal, the nucleation and crystallization of GaN predominantly occur at the gas‐liquid interface or the liquid‐crucible wall.…”

Section: Flux Growth Methodsmentioning

confidence: 95%

“…This uniformity helps prevent the formation of polycrystals, paving the way for the production of larger GaN single crystals. Both experimental and theoretical approaches have been employed by researchers to extensively study these temperature gradient techniques [68–71] . Figure 8(a) illustrates that under conditions of a positive temperature gradient (where the temperature at the top of the crucible is higher), the maximum concentration of GaN solute is found near the gas‐liquid interface.…”

Section: Flux Growth Methodsmentioning

confidence: 99%

“…Both experimental and theoretical approaches have been employed by researchers to extensively study these temperature gradient techniques. [68][69][70][71] Figure 8(a) illustrates that under conditions of a positive temperature gradient (where the temperature at the top of the crucible is higher), the maximum concentration of GaN solute is found near the gas-liquid interface. This is a significant observation as it provides insights into the distribution of GaN solute in the solution under varying temperature conditions.…”

Section: Temperature Gradient Techniquementioning

confidence: 99%

“…This is a significant observation as it provides insights into the distribution of GaN solute in the solution under varying temperature conditions. [69] In scenarios where temperature gradients are either absent or minimal, the nucleation and crystallization of GaN predominantly occur at the gas-liquid interface or the liquid-crucible wall. This process results in the formation of a polycrystalline surface layer.…”

Section: Temperature Gradient Techniquementioning

confidence: 99%

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Research Progress in Liquid Phase Growth of GaN Crystals

Sun,

Liu,

Wang

et al. 2024

Chemistry A European J

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As a wide band gap semiconductor, gallium nitride (GaN) has excellent structural stability and mechanical properties, giving it unique advantages in applications such as high frequency, high power, and high temperature. As a result, it has broad application prospects in optoelectronics and microelectronics. However, the lack of high‐quality, large‐size GaN crystal substrates severely limit the improvement of electronic device performance. To solve this problem, liquid phase growth of GaN has attracted much attention because it can produce higher quality GaN crystals compared to traditional vapor phase growth methods. This review introduces two main methods of liquid phase growth of GaN: the flux method and ammonothermal method, as well as their advantages and challenges. It reviews the research history and recent advances of these two methods, including the effects of different solvents and mineralizers on the growth quality and performance of GaN crystals, as well as various technical improvements. This review aims to outline the principles, characteristics, and development trends of liquid phase growth of GaN, to provide more inspiration for future research on liquid phase growth, and to achieve further breakthroughs in its development and commercial application.

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Section: Flux Growth Methodsmentioning

confidence: 95%

Section: Flux Growth Methodsmentioning

confidence: 99%

Section: Temperature Gradient Techniquementioning

confidence: 99%

Section: Temperature Gradient Techniquementioning

confidence: 99%

See 2 more Smart Citations

Research Progress in Liquid Phase Growth of GaN Crystals

Sun,

Liu,

Wang

et al. 2024

Chemistry A European J

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show abstract

“…This causes the ionised nitrogen (N 3+ ) to dissolve easily in the Na-Ga melt. 19 Subsequently, the ionised nitrogen combines with Ga atoms in the melt to form GaN material. In this process, the Na atoms act as a catalyst to enhance the reaction between the nitrogen (N) atoms and the Ga or Na-Ga intermetallic melt.…”

Section: Basic Principle Of Growing Bulk Gan Crystal By Na-flux Methodsmentioning

confidence: 99%

Growth of Bulk Gallium Nitride Single Crystal by Sodium Flux Method: A Brief Review

Sin¹,

Ibrahim²,

Zainal³

2019

JPS

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Growing interest in homoepitaxial growth of nitride-based devices has driven considerable efforts towards producing bulk gallium nitride single crystal as a substrate for the devices. Therefore, the process of producing the bulk gallium nitride crystal substrate should be simple and yet cost-effective to reduce the production cost of the devices. To date, several methods of growing bulk gallium nitride crystal have been proposed. Sodium flux method is one of the most promising ways since it requires a moderate growth temperature and growth pressure, as well as being simple and costeffective. This paper will briefly review the progress made to advance the growth of bulk gallium nitride single crystal by sodium flux method, including discussing challenges and proposing possible improvements in future.

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Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method

Hao

et al. 2017

Journal of Elec Materi

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Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient

Cited by 9 publications

References 15 publications

Research Progress in Liquid Phase Growth of GaN Crystals

Research Progress in Liquid Phase Growth of GaN Crystals

Growth of Bulk Gallium Nitride Single Crystal by Sodium Flux Method: A Brief Review

Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method

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