Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method

m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates

“…Figure presents overall views of the MOVPE layer surface morphology for each off‐angle sample, as observed through DIC microscopy and AFM. As previously reported, macroscopically, a number of hillocks were observed on the on‐axis samples, whereas the surface of the other samples ( c + 5, c − 5, and a 0.5) was flat, without hillocks. In the on‐axis samples, microscopically, an orderly step‐and‐terrace structure was observed at the facet of the hillocks.…”

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

“…Figure presents overall views of the MOVPE layer surface‐morphology for each V/III ratio condition observed through DIC microscopy. As previously reported , a number of hillocks were observed on samples with varying V/III ratios. The samples with V/III ratios of 460, 900, and 1800 had four‐faceted pyramidal hillocks and were inclined toward the [0001], [], [], and [] directions, respectively.…”

Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies

“…Similar results were obtained for GaN epilayers deposited in the same MOVPE process on GaN substrates with different crystallographic orientations [17]. This means that these studies are very consistent with the previous studies of GaN layers.…”