Growth of GaSe layered compound on a GaAs (001) surface

Fujita, Ken; Izumi, Toshinori; Ohsaki, K.; Tambo, T.; Ueba, H.; Tatsuyama, C.

doi:10.1016/0040-6090(94)90486-3

Cited by 13 publications

(3 citation statements)

References 10 publications

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“…The weakness of this interaction explains the existence of a number of polytypes [4]. Ga 50 Se 50 alloys can be prepared by the melting, vapour deposition and molecular beam epitaxy techniques [5][6][7][8]. These techniques have had very limited success because they do not have control over the kinetics and morphology.…”

Section: Introductionmentioning

confidence: 99%

Extended x-ray absorption fine structure, x-ray diffraction and reverse Monte Carlo studies of an amorphous Ga₅₀Se₅₀alloy produced by mechanical alloying

Machado¹,

Jóvári²,

Lima³

et al. 2004

J. Phys.: Condens. Matter

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The local atomic order of an amorphous Ga50Se50 alloy produced by mechanical alloying (MA) was studied by the extended x-ray absorption fine structure (EXAFS) and x-ray diffraction (XRD) techniques and by reverse Monte Carlo (RMC) simulations of its total x-ray structure factor. The coordination numbers and interatomic distances for the first neighbours were determined by means of EXAFS analysis and RMC simulations. The RMC simulations also furnished the partial pair distribution functions GGa−GaRMC(r), GGa−SeRMC(r) and GSe−SeRMC(r). The results obtained indicated that there are important differences among the local structure of the amorphous Ga50Se50 alloy produced by MA and those of the corresponding crystals, since there are Se–Se pairs in the first coordination shell of the amorphous alloy that are forbidden in the Ga50Se50 crystals.

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Section: Introductionmentioning

confidence: 99%

Extended x-ray absorption fine structure, x-ray diffraction and reverse Monte Carlo studies of an amorphous Ga₅₀Se₅₀alloy produced by mechanical alloying

Machado¹,

Jóvári²,

Lima³

et al. 2004

J. Phys.: Condens. Matter

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“…A fairly general trend in vdW epitaxy. [50] The epitaxy by MBE of bulk PTMCs has been reported without constancy since the 1990s [51][52][53][54][55][56] and unfortunately, most of them reported only the homoepitaxy, or then, the standard heteroepitaxy on GaAs substrates, which results in rough interfaces and growth in other orientations than the [0001], which cannot be directly applied to form the atomic defined interfaces as required for QWs and SLs. Only recently, Sorokin demonstrate the growth of GaTe/ GaSe [49,57] heterostructures that could be used for this goal, however, up to now, no one succeed to grow high-quality InSe/ GaSe heterostructures or to demonstrated quantum confinement on PTMC large-area heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

Claro

Martı́nez-Pastor

Molina-Sánchez

et al. 2023

Adv Funct Materials

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Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates is a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, it is shown that the van der Waals epitaxy of 2D GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heteroepitaxy is applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions.

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“…The weakness of this interaction explains the existence of a number of polytypes [4]. Ga 50 Se 50 alloys can be prepared by the melting, vapor deposition and molecular beam epitaxy techniques [5,6,7,8]. These techniques have had very limited success because they do not have control over the kinetics and morphology.…”

mentioning

confidence: 99%

EXAFS and XRD studies of an amorphous Co57Ti43 alloy produced by mechanical alloying

Machado¹,

Lima²,

Grandi³

2007

Solid State Communications

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The local atomic order of an amorphous Ga50Se50 alloy produced by Mechanical Alloying (MA) was studied by the Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Diffraction (XRD) techniques and by Reverse Monte Carlo (RMC) simulations of its total x-ray structure factor. The coordination numbers and interatomic distances for the first neighbors were determined by means of EXAFS analysis and RMC simulations. The RMC simulations also furnished the partial pair distribution functions G RMC Ga-Ga (r), G RMC Ga-Se (r) and G RMC Se-Se (r). The results obtained indicated that there are important differences among the local structure of the amorphous Ga50Se50 alloy produced by MA and those of the corresponding crystals, since there are Se-Se pairs in the first coordination shell of the amorphous alloy that are forbidden in the Ga50Se50 crystals.

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Growth of GaSe layered compound on a GaAs (001) surface

Cited by 13 publications

References 10 publications

Extended x-ray absorption fine structure, x-ray diffraction and reverse Monte Carlo studies of an amorphous Ga₅₀Se₅₀alloy produced by mechanical alloying

Extended x-ray absorption fine structure, x-ray diffraction and reverse Monte Carlo studies of an amorphous Ga₅₀Se₅₀alloy produced by mechanical alloying

Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

EXAFS and XRD studies of an amorphous Co57Ti43 alloy produced by mechanical alloying

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Growth of GaSe layered compound on a GaAs (001) surface

Cited by 13 publications

References 10 publications

Extended x-ray absorption fine structure, x-ray diffraction and reverse Monte Carlo studies of an amorphous Ga50Se50alloy produced by mechanical alloying

Extended x-ray absorption fine structure, x-ray diffraction and reverse Monte Carlo studies of an amorphous Ga50Se50alloy produced by mechanical alloying

Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

EXAFS and XRD studies of an amorphous Co57Ti43 alloy produced by mechanical alloying

Contact Info

Product

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Extended x-ray absorption fine structure, x-ray diffraction and reverse Monte Carlo studies of an amorphous Ga₅₀Se₅₀alloy produced by mechanical alloying

Extended x-ray absorption fine structure, x-ray diffraction and reverse Monte Carlo studies of an amorphous Ga₅₀Se₅₀alloy produced by mechanical alloying