Growth of Ge on Si(100) and Si(113) studied by STM

Evolution of GaSb epitaxy on GaAs(001)-c(4×4)

“…Although to our knowledge this is the first observation of such an effect for strained III-V semiconductor monolayers, similar vacancy ordering has been observed for compressively strained epitaxial Ge monolayers on Si͑001͒. 16 During the deposition of the third monolayer of GaSb on GaAs͑001͒, the growth changes from 2D to 3D as quantum dots appear. Recently, Priester and Lannoo have proposed that the narrow size distribution of such quantum dots is directly related to the presence of a specific type of wetting layer.…”

Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy

“…In this work, the compressive strain in the alloy was partially transmitted to the substrate and this interaction increases the energy difference between two equivalent configurations of the buckled dimers on the substrate such that it can no longer be suppressed by tip-sample interactions or thermal excitations. It should be pointed out that even though the strain in the 5io.36Geo.64 should be substantially lower than for epitaxial Ge on Si(001) [17], it is still sufficient to buckle the silicon substrate dimers completely.…”

“…2b and 2c. This leads to change in the reconstruction from (2 X 1) symmetric to c(4 X 2) antisymmetric (buckled) configuration [17]. Moreover, the dimer structure of the epitaxial alloy is symmetric if the islands are one dimer wide and buckled otherwise [14].…”

“…Since the SiGe alloy system is compatible with the existing silicon microfabrication technology, it represents a challenging alternative to III-V semiconductor based device technology and recently, high speed commercial applications have started to emerge from SiGe based devices [12]. 0039-6028/95/$09.50 © 1995 Elsevier Science B.V. All rights reserved Recently silicon homoepitaxy on Si(001) [13][14][15] and germanium heteroepitaxy on Si(001) [13,16,17] have been investigated in detail using scanning tunneling microscopy (STM) by various groups. These experiments lead to better understanding of surface diffusion and epitaxial growth at the atomic scale.…”

Highly regular self-organization of step bunches during growth of SiGe on Si(113)

“…1 As for group-IV semiconductors, the step interaction on miscut ͑113͒-oriented Si was studied previously, 2,3 but to our knowledge only very few publications concerning the growth of SiGe on Si͑113͒ exist. 4,5 Knall and Pethica 4 have studied the initial growth behavior of low temperature (T growth Ͻ400°C) molecular beam epitaxy ͑MBE͒ of pure Ge on a Si͑113͒ substrate with a very small miscut. Rows of missing atoms parallel to ͓332 ͔ were observed by scanning tunneling microscopy for a Ge coverage of 3 ML, which led to the formation of long ridges with ͕429͖-oriented sidewalls after continued deposition of Ge.…”