Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy

Growth of well-oriented AlxIn1−xN films by sputtering at low temperature

“…3. The E g was determined to be about 2.41 eV, in a good agreement with the result reported by Peng et al [23] and Kamimura et al [31] and listed in Table 2. Note that the experimental value of E g is larger than the calculated value.…”

“…Thus, the low sheet resistance can be attributed to the higher In concentration and better crystallinity in the Al x In 1−x N film on Si(1 1 1) or sapphire. It should be pointed out that high-quality Al x In 1−x N ternary alloys have recently been grown on the thick GaN buffer layers by metal organic chemical vapor deposition under In-rich conditions, however, the growth temperature is still high and remains [8] Eg(x) = 2.53x 2 − 6.92x + 6.28 [23] Eg(x) = 1.75 + 2.2x − 6.9x 2 + 9.1x 3 [28] 1.47 [29] 1.31 [31] Eg(x) = 0.66 + 0.81x + 4.38x 2 This work 2.41 in the range 750-810 • C [32]. It is believed that the quality of our Al x In 1−x N films can be possibly further improved by optimizing the growth processes including the optimal growth of the buffer and growth control of Al x In 1−x N films using effective low-temperature plasma-based tools [33,34].…”

The Effect of Alloying on the Bandgap Energy of Nanoscaled Semiconductor Alloys

“…Moreover, the bowing behavior of E g (x,D) is weakened, especially when D is only several nanometers, which simplifies the materials design technique for nanoscaled alloys. The model predictions are supported by [27], ca. 40-120 nm (D) [47].…”

“…Equation 4 implies that V(x,D) becomes weak as D drops to smaller sizes, being comparable with 2D 0 (x). Since all thermodynamic quantities are roughly linear functions of 1/D, which corresponds to the surface/ volume ratio of particles, [21] [27] [a]S b (1) is given in units of J g-atom S1 K S1 . [28] , and 11 530, 99 570, 27 500, 37 700, 52 550, 293 400, 259 700, 231 500, and 2793 J mol S1 , respectively [28] .…”

Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE

“…On the other hand, Sadler et al indicated that trimethylindium flux was increased; the indium incorporation initially increased but then leveled off; and for further increases, the amount of indium on the surface as droplets increases significantly [12]. Various growth techniques have been used for growth of InAlN films, such as radio-frequency molecular beam epitaxy (RF-MBE) [13], metal-organic chemical vapor deposition (MOCVD) [14], pulse laser deposition (PLD) [15], and magnetron sputtering [16]. …”