Growth of Highly Oriented ZnO Nanorods by Chemical Vapor Deposition

Abstract

Highly-oriented ZnO nanorods were grown on the fused silica substrates by a thermal CVD technique using Zinc acetylacetonate (Zn(C5H70 2 ) 2 ). The substrate was heated to 500 0 C and the vaporization temperature of Zn(C 5 H 7 0 2 ) 2 was keep at around 135°C. X-ray diffraction and TEM analyses reveal that the nanorods are preferentially oriented toward the c-axis direction.Photoluminescence (PL) and absorption measurements show a strong emission at around 380nm which corresponds to the near band-edge emission of the bulk ZnO. Moreover, the negligible green emission band in PL spectrum and the absence of EI(LO) mode of the ZnO crystal inRaman spectrum indicate a low concentration of oxygen vacancy in the highly-oriented ZnO nanorods.

On the Characteristics of Zinc Oxide Films Grown on (11-20) Sapphire Substrates by Atomic Layer Deposition Using Diethylzinc and Nitrous Oxide

“…For a typical growth run of the ZnO film deposited on (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) sapphire substrate under certain buffer-layer deposition temperature, a 40 nm-thick LT-ZnO buffer layer was first deposited at 100, 200, 300, 400, or 500 o C, followed by the growth of a 0.3 m-thick ZnO film at 600 o C. For a buffer-layer annealed ZnO film, prior to the deposition of a 0.3 m-thick ZnO film at 600 o C, the LT-ZnO buffer layer was annealed at 800 o C for 2min under N 2 O exposure. In the case of a post-annealed ZnO film, after the deposition of a 0.3 m-thick ZnO film, the film was post-annealed at 1000 o C for A four-point probe equipment and a MAC-MXP 3 x-ray diffractometer were employed for revealing conductive and structural characteristics of the ZnO films.…”

“…Due to its exciton binding energy being larger than that of GaN [1,2], the wide band-gap oxide has recently been considered as a potential substitute of GaN for optoelectronic applications. Several techniques were currently employed for ZnO growth including metal-organic chemical vapor deposition (MOCVD) [3], pulsed-laser deposition (PLD) [4], molecular-beam epitaxy (MBE) [5], vapor-liquid-solid epitaxy (VLSE) [6,7], and atomic layer deposition (ALD) [8]. Recently, ALD has manifested itself as an important technique for the growth of nano-scale gate dielectrics in the metal-oxide-semiconductor field-effect transistors (MOSFETs) and conformal side-wall deposition of dielectrics inside high aspect ratio trenches in nano-electronics fabrication [9].…”

Growth of Non-Polar a-plane ZnO Layer On R-plane (1-102) Sapphire Substrate by Hydrothermal Synthesis

“…이러한 ZnO 구조체는 chemical vapor deposition (화학 기상증착법) 9) , metal-organic chemical vapor deposition (유기 금속화학증착법) 10) , pulsed laser deposition (펄스레이저증착 법) 11) , electrochemical deposition (전기화학적증착법) 12) , 그 리고 hydrothermal synthesis method (수열합성법) [13][14][15] …”

Observation of Self-limiting Regime in the Atomic Layer Deposition of ZnO Films using Nitrous Oxide as the Oxygen Supply

“…Moreover, ZnO is a direct wide band gap semiconductor with high melting temperature and stable chemical behavior. Recently, several techniques such as metalorganic chemical vapor deposition (MOCVD) [4], molecular beam epitaxy (MBE) [5], radio-frequency (RF) sputtering [6], vapor-liquid-solid epitaxy (VLSE) [7], pulsed laser deposition (PLD) [8] and atomic layer deposition (ALD) [9] have been conducted to grow ZnO films. Unlike the conventional growth techniques, ALD relies on alternate supply of precursors to achieve an ultimate control of ultra-thin film deposition in a monolayer-by-monolayer fashion.…”