Growth of III-V semiconductor nanowires and their heterostructures

Abstract

introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

Optical property and lasing of GaAs-based nanowires

“…We will briefly explain the growth mechanism and morphology control. We also discuss the phase control of NWs, the growth of doped NWs, and the complex QW structure of NWs [21,[27][28][29].…”

Nanowire Electronics: From Nanoscale to Macroscale

“…To date, a wide range of semiconductor nanowires (e.g., group V, III–V, and II–VI semiconductors and their alloys) have been synthesized with excellent electronics properties comparable to and in some cases surpassing that of the bulk single-crystal materials. ,− For example, carrier mobility values of 900 cm 2 /(V s) have been realized for n -type Si nanowires, 2250 cm 2 /(V s) for p -type GaAs nanowires, 11 500 cm 2 /(V s) for InAs/InP core–shell nanowires, 25 000 cm 2 /(V s) for InSb nanowires, and up to 50 000 cm 2 /(V s) for GaAs/Al 0.16 Ga 0.84 As core–multishell nanowires . Furthermore, semiconductor nanowires can be prepared with highly reproducible electronic properties, which is critical for large-scale integrated circuits. ,− In contrast, the synthesis of carbon nanotubes with controlled chirality and electronic properties remains a significant challenge despite some recent advances. − …”

Oriented assembly of metal-organic frameworks and deficient TiO2 nanowires directed by lattice matching for efficient photoreversible color switching

“…Ultrathin nanowires have a one-dimensional (1D) geometry that promotes charge transport as well as provides large contact area that helps the dispersion of redox-responsive materials [11][12][13]. Hence, interfacing ultrathin TiO 2 nanowires and nanoscale PB into highly ordered structures may create efficient PCSS.…”