Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties

Photoluminescence evaluation of the quality of Cd0.9Zn0.1Te detectors doped with different indium concentrations

“…As is observed from Fig. 1, In doping leads to the decrease of the D emission line that is caused by decreasing concentration of Cd vacancies [1,4,5]. As is generally known a larger intensity ratio of I bound exciton / I D indicates a lower density of detrimental carrier traps and accordingly reveals higher crystallinity and improved detector quality of a sample [1,9].…”

“…The DAP emission peak is caused by complexes of V Cd -D, where D is the residual donors (atoms of III-VII group metals). Also, the D emission peak (A centers) is determined mainly by complexes of V CdTe Cd [5,7]. Analyzing Fig.…”

“…One of the methods to reduce A center concentration and improve the resistivity of CdZnTe crystals is indium (In) doping. The reason for this is that Cd vacancies acceptors are compensated by doping with In donors [5]. There are several studies [5][6][7], where the effect of In doping on the low-temperature photoluminescence (LTPL) properties of Cd 0.9 Zn 0.1 Te detector-grade crystals has been investigated.…”

“…As is generally known, the (A 0 X) emission peak is mainly caused by Cd vacancies (V Cd ). V Cd is a shallow donor center in CdTe and CdZnTe [4,5]. The DAP emission peak is caused by complexes of V Cd -D, where D is the residual donors (atoms of III-VII group metals).…”

“…When identifying the scheme of electron transition resulting in the appearance of the dopingrelated luminescence line D 0 X (peak centered at 1.652 eV), we took into account that the indicated emission energy is characteristic of the luminescence caused by the annihilation of an exciton bound to a shallow donor [4]. It is known [5] that In has two states existing in the CdZnTe:In ingot. One is interstitial neutral In and the other is substitutional In þ ions.…”