Growth of In Ga1− As on GaAs (001) by molecular beam epitaxy

Westwood, D.I.; Woolf, D. A.; Williams, R. H.

doi:10.1016/0022-0248(89)90318-7

Cited by 64 publications

(12 citation statements)

References 32 publications

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“…The Hall mobility trend is consistent with the work of Hooper et al (1993), where they reported a room temperature mobility of 13,000 cm 2 /Vs at a growth temperature of 300°C. Also, Westwood et al (1989) pointed out a room temperature mobility of 16,400 cm 2 /Vs, for a 2.8 lm-thick InAs layer grown at 330°C. For a 5 lm-thick InAs layers, a Hall mobility as high as 33,750 cm 2 /Vs has been obtained at room temperature.…”

Section: Resultsmentioning

confidence: 97%

Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

et al. 2016

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High-quality InAs epilayers were grown onto GaAs (001) substrate by molecular beam epitaxy. The optimal growth conditions were examined over a wide range of substrate temperature, substrate offcut orientation, and As 4 /In flux ratio. The surface morphology, electrical and structural properties were investigated by Nomarski optical microscopy, Hall effect measurement, and X-ray diffraction, respectively. It is worth noting that InAs layers grown on GaAs (001) substrate with 2°offcut towards h110i have better crystalline quality and electrical properties than that grown on GaAs substrate without offcut. The results indicated that the layers grown at 400°C, with a group V/III flux ratio of 8.5, yielded to the highest electrical quality, with a Hall mobility of 22,420 cm 2 /Vs at 80 K and 12,970 cm 2 /Vs at room temperature. It is found that the top part of 5 lm-thick InAs layer exhibits a high Hall mobility of 77,380 and 25,275 cm 2 /Vs, at 80 and 300 K, respectively.

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Section: Resultsmentioning

confidence: 97%

Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

et al. 2016

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“…9 The RAS 10 was coupled to the MBE chamber via a low strain silica window. Details concerning the flux measurement have been described elsewhere.…”

Section: Methodsmentioning

confidence: 99%

Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy

Steimetz¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inStructural and optical characterization of InAs/InGaAs self-assembled quantum dots grown on (311)B GaAs Molecular beam epitaxy grown ZnSe studied by reflectance anisotropy spectroscopy and reflection high-energy electron diffractionReflectance anisotropy spectroscopy ͑RAS͒ in combination with reflection high-energy electron diffraction ͑RHEED͒ was used to study in situ the initial steps of molecular beam epitaxial growth of InAs on GaAs͑001͒. Due to the large lattice mismatch InAs is known to grow in Stranski-Krastanov mode leading to the formation of quantum dots after the transition from two-to three-dimensional growth mode. In this article the precise determination of the growth mode transition and the subsequent development of the islands have been of particular interest. During the growth of the two-dimensional InAs layer, the RHEED-pattern changed from the c͑4ϫ4͒ of the clean GaAs to a ͑1ϫ3͒ surface reconstruction. Accordingly, the RAS-spectra, taken every 0.2 ML, indicate changes of the As-dimer configuration. At 1.8 ML ͑spotty RHEED-pattern͒ a saturation of the intensity of the dimer related RAS-signal around 2.6 eV was found. The relaxation of the InAs layer and the formation of the quantum dots was followed by time-resolved RAS at 2.6 and 4 eV. It is shown here, that the time constant of this process, the thickness of the InAs wetting layer and the equilibrium morphology of the islands are strongly temperature dependent. The remaining equilibrium InAs wetting layer thickness at the surface was estimated to be about 1 ML ͑0.8 ML at 625 K and 1.2 ML at 725 K͒.

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“…Crosses indicate the data measured at 80 K for InAs grown on p-type InAs substrates in the present study while open circles, closed circles, and closed squares indicate the data measured at RT for InAs grown on GaAs substrates in the present study, Refs [9]. and[10], respectively.…”

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confidence: 96%

“…3 are the free-electron concentration measured at RT for MBE-grown InAs on GaAs substrates in Refs. [9] and [10], respectively. One can see in Fig.…”

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confidence: 98%