Growth of In-Rich In x Al1−x N Films on (0001) Sapphire by RF-MBE and their Properties

Naoi, H.; Fujiwara, Kimiko; Takado, S.; Kurouchi, Masahito; Muto, Daisuke; Araki, Tsutomu; Na, H.; Nanishi, Yasushi

doi:10.1007/s11664-007-0195-4

Cited by 13 publications

(8 citation statements)

References 25 publications

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“…In 0.60 Al 0.40 N layer is consistent with the bandgap of layers fabricated by MBE [18] and OMCVD [59]. However, lower than the layers (~2.8 eV) grown by reactive RF magnetron sputtering [15,23] and RF-MBE [29], which are close to the theoretical…”

Section: Methodssupporting

confidence: 80%

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Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Chauhan

Hasenöhrl

Dobročka

et al. 2019

Journal of Applied Physics

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Two In Al 1− N layers were grown simultaneously on different substrates (sapphire (0001) and Ga-polar GaN template) but under the same reactor conditions were employed to investigate the mechanism of strain-driven compositional evolution. The resulting layers on different substrates exhibit different polarities and layer grown on sapphire is N-polar. Moreover, for the two substrates, the difference in degree of relaxation of the grown layers was almost 100%, leading to a large In-molar fraction difference of 0.32. Incorporation of In in In Al 1− N layers was found to be significantly influenced by strain imposed by the under-layers. The evolutionary process of In-incorporation during subsequent layer growth along [0001], the direction of growth was investigated in detail by Auger electron spectroscopy. It is discovered that In 0.60 Al 0.40 N layer grown directly on sapphire consist of two different regions with different molar fractions: transition and uniform region. According to the detailed cross-sectional transmission electron 2 microscopy, the transition region is formed near the hetero-interface due to the partial strain release caused by the generation of misfit-dislocations. The magnitude of residual strain in uniform region decides the In-molar fraction. In Al 1− N layers were analyzed by structural and optical characterization techniques. Our present work also shows that multi-characterization approach to study In Al 1− N is prerequisite for their applications as a buffer layer.

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Section: Methodssupporting

confidence: 80%

“…[27,28] are 2 × 10 9 cm −2 and 1 × 10 11 cm −2 , respectively. This indicates that In 0.60 Al 0.40 N layer reported here has better quality than other published MBE grown layers of same In-molar fraction with FWHM of 0.51° [18] and 0.67° [29] measured by ω-scan of 0002 diffraction.…”

Section: Methodssupporting

confidence: 57%

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Chauhan

Hasenöhrl

Dobročka

et al. 2019

Journal of Applied Physics

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“…The few exceptions e.g. the absorption measurements of Wu et al 84 or the values derived by Naoi et al 99 for InN-rich In x Ga 1−x N alloys, however, approach (for x → 1) a gap which is larger than the theoretical gap of E g = 0.64 eV computed for InN within this work.…”

Section: Fundamental Gap and Bowingcontrasting

confidence: 68%

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
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The ternary, isostructural, wurtzite-derived group-III mononitride alloys In x Ga 1−x N and In x Al 1−x N are reexamined within a cluster expansion approach. Using density functional theory together with the AM05 exchangecorrelation functional, the total energies and the optimized atomic geometries of all 22 clusters classes of the cluster expansion for each material system are calculated. The computationally demanding calculation of the corresponding quasiparticle electronic structures is achieved for all cluster classes by means of a recently developed scheme to approximately solve the quasiparticle equation based on the HSE06 hybrid functional and the G 0 W 0 approach. Using two different alloy statistics, the configurational averages for the lattice parameters, the mixing enthalpies, and the bulk moduli are calculated. The composition-dependent electronic structures of the alloys are discussed based on configurationally averaged electronic states, band gaps, and densities of states. Ordered cluster arrangements are found to be energetically rather unfavorable, however, they possess the smallest energy gaps and, hence, contribute to light emission. The influence of the alloy statistics on the composition dependencies and the corresponding bowing parameters of the band gaps is found to be significant and should, hence, lead to different signatures in the optical-absorption or -emission spectra.

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“…The growth of AlxIn1-xN layers has been reported by different growth techniques such as metal-organic chemical vapor deposition (MOCVD) [11,[15][16][17][18], molecular beam epitaxy (MBE) [19][20][21][22][23] and sputtering deposition [10,[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]. The first two growth techniques allow the achievement of high crystal quality layers at high growth temperatures; but the use of the sputtering low cost technique, allows the deposition of polycrystalline layers at low temperatures, enabling the growth even on flexible substrates, thanks to the high kinetic energy of the ions involved in the growth process.…”

Section: Introductionmentioning

confidence: 99%

High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

Núñez-Cascajero

Blasco

Valdueza-Felip

et al. 2019

Materials Science in Semiconductor Processing

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High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300°C). Their structural, chemical and optical properties are investigated as a function of the growth temperature and type of substrate. X-ray diffraction measurements reveal that all samples have a wurtzite crystallographic structure oriented with the c-axis perpendicular to the substrate surface, without parasitic orientations. The layers preserve their Al content at 37 % for the whole range of studied growth temperature. The samples grown at low temperatures (RT and 100°C) are almost fully relaxed, showing a closely-packed columnar-like morphology with an RMS surface roughness below 3 nm. The optical band gap energy estimated for layers grown at RT and 100°C on sapphire and glass substrates is of ~2.4 eV while it red shifts to ~2.03 eV at 300°C. The feasibility of growing high crystalline quality AlInN at low growth temperature even on amorphous substrates open new application fields for this material like surface plasmon resonance sensors developed directly on optical fibers and other applications where temperature is a handicap and the material cannot be heated.

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Growth of In-Rich In x Al1−x N Films on (0001) Sapphire by RF-MBE and their Properties

Cited by 13 publications

References 25 publications

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
View full text Add to dashboard Cite

High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

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Growth of In-Rich In x Al1−x N Films on (0001) Sapphire by RF-MBE and their Properties

Cited by 13 publications

References 25 publications

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Distribution of cations in wurtzitic InxGa1−xN and InxCarvalho1, Schleife2, Furthmüller3 et al. 2012Phys. Rev. B251180View full textAdd to dashboardCite

High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

Contact Info

Product

Resources

About

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
View full text Add to dashboard Cite

High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering