Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Kim, Hyun Jin; Na, Hyunseok; Kwon, Soon‐Yong; Seo, Hosung; Kim, Hee Jin; Shin, Yeong Gil; Lee, Keon-Hun; Kim, Dong Hyuk; Oh, Hye Jeong; Yoon, Seon‐Jin; Sone, Cheolsoo; Park, Yongjo; Yoon, Euijoon

doi:10.1016/j.jcrysgro.2004.05.039

Cited by 30 publications

(11 citation statements)

References 13 publications

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“…Besides strain relaxation, the effect of quantum confinement also plays an important role in the optical behaviour of a nanopost. The dimensions of the InGaN regions in our nanoposts are actually comparable to those of the quantum dots grown with the Stranski-Krastanov mode [16,17]. To estimate the effects of 3D quantum confinement in the nanoposts, we performed the numerical calculation for the effective band gap of an InGaN/GaN quantum disc 3 nm in thickness.…”

Section: Discussionmentioning

confidence: 99%

Strain relaxation and quantum confinement in InGaN/GaN nanoposts

et al. 2006

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Nanoposts of 10-40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL and time-resolved PL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation.

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Section: Discussionmentioning

confidence: 99%

Strain relaxation and quantum confinement in InGaN/GaN nanoposts

et al. 2006

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“…The average layer thickness and the indium incorporation as a function of growth temperatures were investigated by analyzing o/2y X-ray scan from (0002) reflections. Since the position of the InGaN peak relative to GaN peak in X-ray spectra depends on indium content as well as on the strain in InGaN layer, the strain was independently extracted from reciprocal space map (RSM) from an asymmetric reflection (10)(11)(12)(13)(14)(15). It should be noted that diffracted intensity around (10-15) reflection from InGaN layer was very poor, and hence recoding the RSM was not easy for thin InGaN layers.…”

Section: Growth Of Ingan Qdsmentioning

confidence: 99%

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Kadir¹,

Meißner²,

Schwaner³

et al. 2011

Journal of Crystal Growth

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“…The growth temperature of InGaN QDs was 650 C. The In composition in our thick InGaN layers was $80%, as determined by electron probe micro-analysis (EPMA) and X-ray diffraction (XRD). 13) The optical properties of InGaN/GaN nanostructures were characterized by photoluminescence (PL) and cathodoluminescence (CL). PL experiments were performed using a HeCd laser (325 nm) as a pumping source.…”

Section: Methodsmentioning

confidence: 99%

Strong Room-Temperature Near-Ultraviolet Emission from In-Rich InGaN/GaN Nanostructures Grown by Metalorganic Chemical Vapor Deposition

Kwon¹,

Kim²,

Kim³

et al. 2005

Jpn. J. Appl. Phys.

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We report the successful growth of In-rich InGaN/GaN nanostructures such as multiple quantum wells (MQWs) and quantum dots (QDs) by metalorganic chemical vapor deposition (MOCVD). Introduction of a relatively high growth temperature (730 C) made it possible to grow In-rich InGaN/GaN QWs, and growth interruption (GI) was effectively used to improve the structural and optical properties of the QWs. To enhance thermal characteristics, an artificial formation of In-rich InGaN/GaN QDs was made at a relatively lower growth temperature (650 C) than that of QWs. The well width of the In-rich InGaN/GaN QWs and the dot height of the In-rich InGaN/GaN QDs were both approximately 1 nm, and we obtained strong roomtemperature near-ultraviolet (UV) emission from these In-rich InGaN/GaN nanostructures. This strongly suggests that ultrathin In-rich InGaN nanostructures can be a new candidate for a near-UV source, which might replace the conventional low-indium-content (<10%), thicker InGaN QW.

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Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Cited by 30 publications

References 13 publications

Strain relaxation and quantum confinement in InGaN/GaN nanoposts

Strain relaxation and quantum confinement in InGaN/GaN nanoposts

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Strong Room-Temperature Near-Ultraviolet Emission from In-Rich InGaN/GaN Nanostructures Grown by Metalorganic Chemical Vapor Deposition

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