Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source

Hino, Yuji; Ozaki, Nobuhiko; Ohkouchi, Shunsuke; Ikeda, Naoki; Sugimoto, Yoshimasa

doi:10.1016/j.jcrysgro.2012.12.077

Cited by 15 publications

(22 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As reported in our previous paper [8], a reduction of PL intensity was observed with a decrease in d cap . However, the reduction of PL intensity can be recovered by reducing ΔT.…”

Section: Methodssupporting

confidence: 87%

See 1 more Smart Citation

Broadband emission centered at ∼1 µm with a Gaussian‐like spectrum by stacking In‐flushed QD layers

Ozaki

Hino

Ohkouchi

et al. 2013

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

We have grown a stack of In‐flushed InAs quantum dot (QD) layers to realize a broadband emission centered at ∼1 µm with a Gaussian‐like spectrum as a light source for optical coherence tomography (OCT). The In‐flush process, which enables control of the height of the QD, was optimized to control the emission wavelength and intensity of self‐assembled InAs/GaAs QDs. A partial capping layer of GaAs was deposited on as‐grown InAs/GaAs QDs with various thicknesses (dcap), and a rapid annealing of the sample was executed with the proper annealing temperature. By optimizing dcap and the annealing temperature for each QD layer, a broadband Gaussian‐like spectrum with a 102‐nm‐bandwidth was obtained. The coherence function of the emission spectrum exhibits a 4.5‐µm axial resolution for OCT images without distinct side lobes. These results demonstrate the effectiveness of the In‐flushed QDs as a light source to obtain high‐quality OCT images. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…As reported in our previous paper [8], a reduction of PL intensity was observed with a decrease in d cap . However, the reduction of PL intensity can be recovered by reducing ΔT.…”

Section: Methodssupporting

confidence: 87%

“…We demonstrated that the In-flush technique is useful for controlling the height of InAs/GaAs QDs so they emit at wavelengths of ~1 μm. Further, we verified that the emission intensity of the In-flushed QDs depends on the annealing temperature of the In-flush process [8].…”

supporting

confidence: 59%

Broadband emission centered at ∼1 µm with a Gaussian‐like spectrum by stacking In‐flushed QD layers

Ozaki

Hino

Ohkouchi

et al. 2013

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

show abstract

“…GaAs capping induces In desorption from the InAs QD surfaces and the intermixing of In and Ga atoms at the interface between the QDs and the cap layer owing to the compressive lattice strain, 11,12 which results in QD shrinkage and a shift of the emission wavelength toward the shorter-wavelength side. 13 The introduction of an InGaAs strain-reducing layer (SRL) 14,15 and an In flushing process 16,17 enables the emission wavelength of InAs QDs to be controlled by adjusting the variation in QD size during the capping process. These methods, however, have disadvantages when fabricating the multiple-stacked QD structures used as device active layers, such as the generation of stacking faults due to the accumulation of lattice strain in the entire structure used for the SRL and the complex sequence of substrate temperatures required for In flushing.…”

Section: Introductionmentioning

confidence: 99%

Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature

Kaizu

Matsumura

2015

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The center emission wavelength, however, should be controlled close to 1 m. Although we attempted to blue-shift the QD emission wavelength using several methods [14,15], controlling the emission's center wavelength at ~1 m while maintaining the emission intensity has been difficult.…”

Section: Introductionmentioning

confidence: 99%

Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

Ozaki

Kanehira

Hayashi

et al. 2017

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

We obtained a high-intensity and broadband emission centered at ~1 m from InGaAs quantum three-dimensional (3D) structures grown on a GaAs substrate using molecular beam epitaxy. An InGaAs thin layer grown on GaAs with a thickness close to the critical layer thickness is normally affected by strain as a result of the lattice mismatch and introduced misfit dislocations. However, under certain growth conditions for the In concentration and growth temperature, the growth mode of the InGaAs layer can be transformed from two-dimensional to 3D growth. We found the optimal conditions to obtain a broadband emission from 3D structures with a high intensity and controlled center wavelength at ~1 m.This method offers an alternative approach for fabricating a broadband near-infrared light source for telecommunication and medical imaging systems such as for optical coherence tomography.

show abstract

Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source

Cited by 15 publications

References 12 publications

Broadband emission centered at ∼1 µm with a Gaussian‐like spectrum by stacking In‐flushed QD layers

Broadband emission centered at ∼1 µm with a Gaussian‐like spectrum by stacking In‐flushed QD layers

Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature

Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

Contact Info

Product

Resources

About