Growth of InAs/InP-based quantum dots for 1.55 μm laser applications

Poole, Philip J.; Kaminska, Kate; Barrios, Pedro; Lu, Zhenguo; Liu, J.

doi:10.1016/j.jcrysgro.2009.01.129

Cited by 99 publications

(44 citation statements)

References 21 publications

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“…One facet (M1) was coated for broadband high reflectivity (95%); the other (M2) was as cleaved giving a 31% reflectivity. The gain medium consisted of five stacked layers of InAs QDs with InGaAsP barriers [11].I t was driven with continuous-wave (c.w.) current on a temperaturecontrolled heat sink.…”

Section: Resultsmentioning

confidence: 99%

THz optical pulses from a coupled-cavity quantum-dot laser

Liu

Lü

Poole

et al. 2012

Optics Communications

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Optical pulses are generated from a coupled-cavity quantum-dot (QD) laser consisting of a short QD-waveguide Fabry-Perot (F-P) cavity and three long external fiber Bragg grating (FBG) cavities. When the laser is biased at low operation current, the feedback from the external cavities dominates and laser pulses have a 1.01 THz repetition rate, determined by the equal frequency difference of the three FBGs. We are thus able to decouple the repetition rate of a mode-locked laser from the cavity length. With much higher bias current, the QD F-P cavity dominates and the repetition rate is switched to 43.8 GHz, defined by the length of the F-Pcavity.Crown

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Section: Resultsmentioning

confidence: 99%

THz optical pulses from a coupled-cavity quantum-dot laser

Liu

Lü

Poole

et al. 2012

Optics Communications

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“…Each QD layer includes a GaP underlayer (1 ML) in order to reduce inhomogeneous broadening due to stacking [4,16] and provide a smooth surface for dot formation [17]. A double capping technique was used in order to provide a narrow QD height distribution.…”

Section: Methodsmentioning

confidence: 99%

“…A double capping technique was used in order to provide a narrow QD height distribution. More details on the growth of the samples can be found in [4]. For planar propagation studies, a series of four samples were grown with dot periodicity of 30 nm, 17 nm, 9.1 nm and 5.1 nm.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, InAs/InP quantum dot (QD) lasers operating in the telecommunications wavelength range showed promising properties such as low threshold [3], high external efficiency [4], high bandwidth [5], multiwavelength emission [6] and passive mode-locking with sub-300 fs pulse duration [7,8]. Demonstration of polarization insensitive quantum dot devices, such as lasers, VCSELS and semiconductor optical amplifiers (SOAs), remains a challenge as self-assembled QDs are based on strain-driven growth, leaving little play for strain bandgap engineering such as tensile-strained layers used for polarization control in QWs [9].…”

Section: Introductionmentioning

confidence: 99%

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Polarization properties of InAs/InGaAsP/InP quantum dot stacks

Roy-Guay

Poole

Raymond

2010

Semicond. Sci. Technol.

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Surface and edge emission polarization properties of samples containing four InAs/InGaAsP/InP quantum dot layers with a stacking period from 30 nm down to 5.1 nm are investigated. Closely stacked layers show decreasing (constant) edge emission degree of polarization for emission perpendicular to the short dot (long dot) axis. Increase of the surface emission degree of polarization with decreasing period suggests an elongation of the wavefunction as dot period decreases. Use of a miscut substrate eliminates this surface emission polarization dependence, which could lead to edge polarization-independent applications.

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“…QD materials, set-up, results and discussions barriers. The QDs were tuned to operate in the C-or L-band using a QD double cap growth procedure and a GaP sublayer [16,17]. In the double cap process the dots are partially capped with a thin layer of barrier material, followed by a 30 s growth interruption and then complete capping.…”

Section: Introductionmentioning

confidence: 99%