Growth of indium nitride nanopetal structures on indium oxide buffer layer

Singh, V. N.; Partheepan, G.; Kumar, Y. V. Pavan; Khare, Ashish; Marg, K. S. Krishnan; Khas, Hauz

doi:10.1166/mex.2013.1132

Cited by 3 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nano-petal structures (Figure 3(a)) which were formed according to proposed ‘gaseous model’ [12,20] as a result of bubbles bursting of low-melting components were ascribed to InN. Similar nano-petals InN structures were demonstrated in nitrogen and ammonia flow during the growth of InN on In 2 O 3 buffer layer [23] and during combined thermal/UV photo-assisted process [22].…”

Section: Resultsmentioning

confidence: 94%

Formation of composite structure based on boron and indium components under concentrated light in flow of nitrogen

Sartinska

Eren

Efimov

2019

Advances in Applied Ceramics

View full text Add to dashboard Cite

Transformation of BN and B powders and 25 wt.% In in a high-flux optical furnace in flow of nitrogen was considered. Powders were collected at different distances from a reaction zone. In nanopowder with a thin oxidised layer was formed during heating BN and In at 1000°C. Heating at 1500°C s results in platelike and equiaxed BN particles, compose B inside and H3BO3 layer, nano-petal particles, compose InN and number of fullerene-like particles with complicated 'core shell' structure. The last was formed as a result of segregation of transparent shell of B components around crystalline fullerene-like InN. These structures arise from a bubbles evolution of B and In components in conformity with 'gaseous model for nanotubes and fullerenes formation and growth'. InN prevents the formation of new modifications of BN and shifting stretching band of BN according to FTIR. BN disclosed itself as an excellent getter for InN.

show abstract

Section: Resultsmentioning

confidence: 94%

Formation of composite structure based on boron and indium components under concentrated light in flow of nitrogen

Sartinska

Eren

Efimov

2019

Advances in Applied Ceramics

View full text Add to dashboard Cite

show abstract

“…Finally, further disintegration of these products will lead to the formation of In 2 O 3 and H 2 O. Moreover, the released N 2 O 5 gas will decompose gradually into nitrogen dioxide (NO 2 ) gas even at room temperature [22]. The possible reactions for the formation of In 2 O 3 can be expressed as follows [20]: …”

Section: Resultsmentioning

confidence: 99%

Effects of coating cycles on spin-coated indium nitride thin films

Lee

Yam

et al. 2018

Surface Engineering

View full text Add to dashboard Cite

Indium nitride (InN) thin films were prepared on aluminium nitride/p-silicon (111) substrates via sol-gel spin coating followed by nitridation. The InN thin films deposited at different coating cycles (10, 20 and 30) were analysed, and the growth mechanism was discussed in depth. The film thickness was enhanced with increasing number of coating cycle. X-ray diffraction showed that the crystalline structure of InN was improved at 20 coating cycles and started to degrade at 30 cycles. The diffusion path of the active nitrogen atoms into the deeper film was limited by the low growth temperature and led to gradual surface saturation. The film deposited at 20 cycles showed densely packed InN grains. Through the proposed approach, an InN optical band gap of 1.71 eV was achieved. It can be deduced that the variation in the number of coating cycles has significantly affected the film properties.

show abstract

Influences of elevated thermal decomposition of ammonia gas on indium nitride grown by sol–gel spin coating method

Lee

Yam

et al. 2017

Materials Research Bulletin

View full text Add to dashboard Cite

Indium nitride (lnN) with unique properties such as small energy band gap of 0.7 eV, high electron affinity and carrier density, is a potentia l se miconductor material in the applications of optical and electronic devices [I , 2] . Despite, the suitable growth conditions of InN are very stringent due to its low dissociation temperature and volatility of atomic nitrogen [3] . In this study, InN thin films grown on aluminium nitride (AIN) on p-type silicon(! II) [AIN/p-type Si(lll)] substrates are prepared via sol-gel spin coating method followed by nitridation process. Sol-gel spin coating is a low cost, fast processing and dilute solution based deposition method to produce thin and uniform film on substrate. The spin-coater is programmed to operate in a two-step spin profile; the first spinning speed is slower than the second. In subsequent, two three-zone tube furnaces connected in parallel manner are used for nitriding process; the passage of ammonia gas (NH3) into the first furnace is decomposed to produce reactive nitrogen radicals and brought into the second furnace for crystallization oflnN at 600 °C. The effects of thermal decomposition of NH3 gas on structural properties and surface morphologies of the depos ited films are explored. X-ray diffraction results reveal that the crystalline quality of InN degrades markedly with increasing thermal decomposition ofNH3 gas from 700 to 850 °C; in which, the association of indium oxide in the deposited film is detected. In the meantime, thermal etching effect and formation of indium droplet on the film can be observed at 850 oc; the findings are aligned with the cross-sectional analysis obtained by energy dispersive spectroscopy attached field-emission scanning electron microscopy, where the film thickness is found to be reduced tremendously . This phenomenon is mainly due to the increase of hydrogen partial pressure at elevated thermal decomposition of N H3 gas. On the other hand, the film surface with densely packed InN grains and film thickness of approximately to 620 nm is obtained at 700 oc. The results deduce that this temperature is in favor for the growth of InN thin films .

show abstract

Growth of indium nitride nanopetal structures on indium oxide buffer layer

Cited by 3 publications

References 22 publications

Formation of composite structure based on boron and indium components under concentrated light in flow of nitrogen

Formation of composite structure based on boron and indium components under concentrated light in flow of nitrogen

Effects of coating cycles on spin-coated indium nitride thin films

Influences of elevated thermal decomposition of ammonia gas on indium nitride grown by sol–gel spin coating method

Contact Info

Product

Resources

About