Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy

Lee, Wonjun; Sohn, Won Bae; Shin, Jae Cheol; Han, Il Ki; Kim, Tae Geun; Kang, JoonHyun

doi:10.1016/j.jcrysgro.2023.127233

Cited by 4 publications

(3 citation statements)

References 59 publications

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“…Further, subtracting (11) from (10) and including d 2 InGaAs = 2 d 1 InGaAs , the thickness of the In x Ga 1−x As layer in SL1 was obtained experimentally from:…”

Section: Double Superlattice Test Structuresmentioning

confidence: 99%

“…In spite of notable accomplishments, the epitaxial growth of QCL structures continues to be a challenge. In particular, for complex ternary systems, the requirements for the precise control of its composition, layer thickness, and interface quality make the heterogeneous epitaxial growth of InP-based QCL structures very challenging [8][9][10]. However, the current QCL literature focuses on the performance aspects of devices, with little work devoted to growth methodology.…”

Section: Introductionmentioning

confidence: 99%

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Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers

Gutowski,

Sankowska,

Bugajski

et al. 2023

Crystals

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In this paper, we present the methodology for precise calibration of the Molecular Beam Epitaxy (MBE) growth process and achieving run-to-run stability of growth parameters. We present the analysis of the influence of fluxes stability during the growth of long wavelength quantum cascade laser structures designed for the range λ ~ 12–16 µm on wavelength accuracy with respect to desired emission wavelength. The active region of the lasers has a complex structure of nanometer thickness InxGa1−xAs/InyAl1−yAs superlattice. As a consequence, the compositional and thickness control of the structure via bulk growth parameters is rather difficult. To deal with this problem, we employ a methodology based on double-superlattice test structures that precede the growth of the actual structures. The test structures are analyzed by High Resolution X-ray Diffraction, which allows calibration of the growth of the complex active region of quantum cascade laser structures. We also theoretically studied the effect of individual flux changes on the emission wavelength and gain parameters of the laser. The results of simulations allow for the determination of flux stability tolerance, preserving acceptable parameters of the laser and providing means of emission wavelength control. The proposed methodology was verified by the growth of laser structures for emission at around 13.5 μm.

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“…Further, subtracting (11) from (10) and including d 2 InGaAs = 2 d 1 InGaAs , the thickness of the In x Ga 1−x As layer in SL1 was obtained experimentally from:…”

Section: Double Superlattice Test Structuresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers

Gutowski,

Sankowska,

Bugajski

et al. 2023

Crystals

View full text Add to dashboard Cite

show abstract

“…Thermal resistance is important for many new fields, such as light-emitting diodes [1,2], quantum cascade lasers [3,4], phase-change memory [5,6], thermoelectric devices [7,8], wearable devices [9], and photovoltaic cells [10,11]. Lastly, thermal dissipation in batteries plays a crucial role [12].…”

Section: Introductionmentioning

confidence: 99%

Investigating the Thermal Conductance of the Cu/Si Interface Using the Molecular Dynamics Method

Liu,

Zhi,

Song

et al. 2024

Metals

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Investigating thermal transport at the Cu/Si interface holds significant importance, as understanding interface thermal conductance is crucial for enhancing materials interface thermal management, designing thermal interface materials, and improving the performance of thermoelectric devices. In this study, we conducted molecular dynamics simulations in conjunction with the Green–Kubo relation to calculate the thermal conductance of the Cu/Si interface. We successfully obtained Cu/Si interface potentials using the lattice inversion method. Our findings revealed that the thermal conductance of the Cu/Si interface is notably influenced by the interface structure. Specifically, the thermal conductance of the Cu(001)/Si(001) interface and the Cu(111)/Si(111) interface are similar, and both are higher than that of the Cu(110)/Si(110) interface. Furthermore, through first-principles calculations of the adhesion energy, we discovered that interface binding strength plays a critical role in determining interface thermal transport properties, and the influence of pressure was also discussed. This study contributes not only to the understanding of the thermal transport mechanisms at the Cu/Si interface but also provides important insights for designing novel interface materials.

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Interfacial characteristics dependence on interruption times in InGaAs/InAlAs superlattice grown by molecular beam epitaxy

Lee,

Seo,

Shin

et al. 2024

Journal of Alloys and Compounds

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Growth of InGaAs/InAlAs superlattices for strain balanced quantum cascade lasers by molecular beam epitaxy

Cited by 4 publications

References 59 publications

Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers

Calibration Technique for MBE Growth of Long Wavelength InAlAs/InGaAs Quantum Cascade Lasers

Investigating the Thermal Conductance of the Cu/Si Interface Using the Molecular Dynamics Method

Interfacial characteristics dependence on interruption times in InGaAs/InAlAs superlattice grown by molecular beam epitaxy

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