Growth of InI single crystals for nuclear detection applications

Bhattacharya, P.; Groza, Michael; Cui, Yunlong; Caudel, Dave; Wrenn, T.; Nwankwo, A.; Bürger, A.; Slack, Glen A.; Ostrogorsky, A.G.

doi:10.1016/j.jcrysgro.2009.12.021

Cited by 15 publications

(10 citation statements)

References 6 publications

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“…As expected from the fact that InI has soft lattice and low melting temperature of 360 C (Ref. 37), the formation energies of native defects are generally low. In particular, the formation energies of some compensating defects that counteract the prevailing conductivity are very low.…”

Section: B Native Defects In Inimentioning

confidence: 51%

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First principles study of native defects in InI

Biswas

2011

Journal of Applied Physics

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Heavy-metal halide semiconductors have attracted much interest recently for their potential applications in radiation detection because the large atomic numbers (high Z) of their constituent elements enable efficient radiation absorption and their large band gaps allow room temperature operation. However, defect properties of these halides and their connection to carrier transport are little known. In this paper, we present first-principles calculations on native defects in InI, which is a promising material for applications in room temperature radiation detection. The important findings are: (1) anion and cation vacancies (Schottky defects) form the dominant low-energy defects that can pin the Fermi level close to midgap, leading to high resistivity that is required for a good radiation detector material; (2) the anion vacancy in InI induces a deep electron trap, which should reduce electron mobility-lifetime product in InI; (3) low diffusion barriers of vacancies could be responsible for the observed polarization phenomenon at room temperature.

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Section: B Native Defects In Inimentioning

confidence: 51%

“…e pin f is close to the midgap and thus, should lead to the high resistivity as observed experimentally. 21,37,38 When the Fermi level is at e pin f , the low-energy defects are V In , V I , In I , and In i . These defects should have most impact on the carrier transport in InI.…”

Section: B Native Defects In Inimentioning

confidence: 99%

First principles study of native defects in InI

Biswas

2011

Journal of Applied Physics

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“…Single crystals of heavy metal halogenides like TlBrTlI and TlCl-TlBr are of interest for applications in infrared optics, whereas TlCl and TlCl-TlBr are used in the Cherenkov-light detector radiators [1,2]. A better opportunity to manage in wide energy range the band gap E g for practical applications exists with varying the cationic content of InI-TlI (from E g = 2.01 eV for InI to E g = 2.9 eV for TlI).…”

Section: Introductionmentioning

confidence: 99%

Specific Features of Content Dependences for Energy Gap in In_xTl_1-xI Solid State Crystalline Alloys

et al. 2018

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A series of InxTl1−xI (x = 0.4−0.9) single crystalline solid state alloys were successfully synthesized by the vertical Bridgman method. For the first time the density functional theory based band structure calculations are performed and features of the band energy dispersion are discussed. Comparison with the experimental energy gap Eg obtained from the optical photoconductivity is discussed. An essential role of the localized defects and excitons in formation of the edge photoconductivity is analyzed. Relation between the crystal structure and photoconductivity of the materials studied is discussed. Also the origin of the principal valence and conduction bands is explored. Experimental measurements of the band gap Eg by the optical and photoconductivity methods have given opposite dependences with respect to the indium content x. Features of the photoconductivity spectra for different crystallographic directions have been discussed with taking into account the chemical bonds anisotropy.

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“…And because of the large resistivity (∼ 10 11 Ω•cm) and life‐time product for electron (∼ 7.2 × 10 −5 cm 2 /V), InI detectors have high energy resolution and detection efficiency. Another major advantage of InI is that compared to other compound semiconductors such as CdZnTe (Cd), HgI 2 (Hg)and GaAs (As), both indium and iodine are less toxic during the detector fabrication and handling processes .…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics analysis of indium iodide polycrystal synthesis

Zhang

et al. 2015

Crystal Research and Technology

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According to the thermodynamics analysis, the molar enthalpy change, the molar entropy increase, the Gibbs free energy change and the balance constant of indium iodide polycrystal synthesis reaction were calculated in order to evaluate the feasibility of reaction temperature on 653 K. After the temperature 653 K was applied in the synthesis experiment, indium iodide polycrystal was successfully obtained by the two-zone vapor transporting method. The result of X-ray diffraction analysis indicates the temperature 653K can be used for indium iodide polycrystal synthesis.

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Growth of InI single crystals for nuclear detection applications

Cited by 15 publications

References 6 publications

First principles study of native defects in InI

First principles study of native defects in InI

Specific Features of Content Dependences for Energy Gap in In_xTl_1-xI Solid State Crystalline Alloys

Thermodynamics analysis of indium iodide polycrystal synthesis

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Growth of InI single crystals for nuclear detection applications

Cited by 15 publications

References 6 publications

First principles study of native defects in InI

First principles study of native defects in InI

Specific Features of Content Dependences for Energy Gap in InxTl1-xI Solid State Crystalline Alloys

Thermodynamics analysis of indium iodide polycrystal synthesis

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Product

Resources

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Specific Features of Content Dependences for Energy Gap in In_xTl_1-xI Solid State Crystalline Alloys