Growth of InN nanocolumns by RF-MBE

Evaluation of bandgap energy and carrier density of InN nanocolumns

“…Self-organized nanocolumns have received much attention because of their advantage in providing high-quality crystalline [8,9], dislocation-free structure [2] and large luminescence efficiency [8]. The InN nanocolumn is a crystal of columnar shape with diameter and height depending on the growth condition.…”

Metal-organic molecular beam epitaxy growth of InN films on highly orientated TCO/Si(100) substrates

“…Various methods have been used for deposition of epitaxial InN including RF-sputtering, metal-organic chemical vapor deposition (MOCVD), RF-metal-organic molecular beam epitaxy (RF-MOMBE) and pulse laser deposition (PLD) [6][7][8][9][10][11][12][13][14]. In this paper, we report on the microstructural and electrical properties of InN thin films grown on n-ZnO substrates under different V/III ratio.…”

Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE

“…However, InN films commonly present a low crystal quality mainly caused by the low dissociation temperature and the lack of lattice-matched substrates [8]. These problems can be avoided with the growth of InN nanocolumns (InN NCs), where the lateral stress relaxation at sidewalls allows obtaining defect-free and strain-free nanostructures [9,10,11,12].…”

“…Thus far, most of the published work regarding InN growth is for temperatures higher than 400∘normalC [9,10,13,14]. For example, Kim et al performed a study of InN growth at 500∘normalC.…”