Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

Abstract

The growth of InPBi by molecular beam epitaxy on an InP(311)B substrate is investigated. Bi atoms are incorporated into the samples grown at or below 350 °C. A Bi concentration of up to 5% is estimated by X‐ray diffraction and secondary mass spectroscopy measurements. Although the surface roughness increased with decreasing growth temperature and at a high Bi flux, Bi atoms are found to have surfactant effects on the surface flatness of the samples grown at a low Bi flux.