Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator

Ding, Xiaobin; Zeng, Hao; Ding, He; Zhang, Jianhua; Huang, Chuan-Xin; Shi, Weimin; Li, Jun; Jiang, Xue-Yin; Zhang, Zhilin

doi:10.1016/j.spmi.2014.10.007

Cited by 25 publications

(10 citation statements)

References 18 publications

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“…As an important part of TFTs, channel layers play a crucial role in TFT performance. ZnO-based single channel layer or double channel layer, such as HZO [4], IGZO [5], and IZO/IGZO [6], has been investigated for use in TFTs because of their high mobility. Among those ZnO-based TFTs, amorphous indium-gallium-tin oxide (IGZO) TFTs are regarded as the most promising devices as indium and gallium have excellent lattice matching with ZnO and gallium could suppress carrier generation via oxygen vacancy formation in IGZO.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

et al. 2017

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Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3 as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained E a, which can explain the experimental observation. A high-field effect mobility of 9.4 cm2/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 107 and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.

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Section: Introductionmentioning

confidence: 99%

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

et al. 2017

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“…Vacuum-processes. Research trends (Table 1) for vacuum-processed oxide TFTs are as follows: (1) variation in oxide semiconductor materials and use of high-k dielectrics to achieve high µ [6][7][8][9][10][11][12][13]; (2) low-cost and non-toxic implementation using indium-free compositions [14][15][16]; (3) high-reliability components based on flexible substrates [17]; and (4) vacuum-deposition technology that uses non-sputtering methods (e.g. atomiclayer deposition (ALD) or metalorganic chemical-vapor deposition (MOCVD)) [14,16,18].…”

Section: Metal Oxide Tftsmentioning

confidence: 99%

Recent progress in the development of backplane thin film transistors for information displays

Jang

Parkjoonhui

et al. 2020

Journal of Information Display

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This review aims to provide a technical roadmap and progress update for backplane thin film transistors (TFTs) used in organic light emitting diodes flat panel displays and next-generation flexible displays. In the introduction, we provide a general overview as well as trends in research on backplane TFTs. The main section describes current technical level and future prospects for amorphous metal oxide, semiconducting carbon nanotube, 2D transition metal dichalcogenide, and organic TFTs. The summary and prospects are provided in the conclusion.

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“…Although the mobility‐boosting mechanism in bilayer AOS TFTs has not been thoroughly clarified, it is normally associated with the heterojunction‐induced quantum well [ 27,38 ] and also the interface defect suppression. [ 28,39,40 ] Considering that the abundant native defects in high‐mobility AOSs [ 34,35 ] have relatively high diffusion coefficient, [ 41–44 ] such as metal interstitial (M i ) and oxygen vacancy (V O ), [ 45–48 ] the heterojunction interface and defect distribution [ 49,50 ] can be readily influenced by the interactions between AOS layers, for example, cation interdiffusion [ 26,51 ] and chemical reactions, [ 28 ] thus dominating both performance and reliability of multilayer AOS TFTs. The full play of AOS heterojunction potential thus urges the clarification of the underlying mechanism and corresponding novel solutions.…”

Section: Introductionmentioning

confidence: 99%

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Wang

Yang

et al. 2022

Adv Elect Materials

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The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS “heterojunction” is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

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Growth of IZO/IGZO dual-active-layer for low-voltage-drive and high-mobility thin film transistors based on an ALD grown Al2O3 gate insulator

Cited by 25 publications

References 18 publications

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition

Recent progress in the development of backplane thin film transistors for information displays

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

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