2018
DOI: 10.1016/j.physb.2017.10.078
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Growth of KOH etched AZO nanorods and investigation of its back scattering effect in thin film a-Si solar cell

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Cited by 6 publications
(2 citation statements)
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“…2a). 34 Thus, it can be expected that the Cu 2 O films with bundle-type columnar grains show preferential wet etching along the GBs owing to the high density of the crystal grains. In particular, we must focus on the outstanding difference in the etching rate between the GBs and the grains inside.…”
Section: Wet Chemical Etching Process Utilized For Channel Definitionmentioning
confidence: 99%
“…2a). 34 Thus, it can be expected that the Cu 2 O films with bundle-type columnar grains show preferential wet etching along the GBs owing to the high density of the crystal grains. In particular, we must focus on the outstanding difference in the etching rate between the GBs and the grains inside.…”
Section: Wet Chemical Etching Process Utilized For Channel Definitionmentioning
confidence: 99%
“…Radially stacked p-n or p-i-n junction designs have attracted much attention, where the charge collection path is in the radial direction and the light path is in the vertical direction along the core. [82][83][84][85][86] To form such core-shell RJ structure, different designed nano-architectures have been investigated/used as the core, such as nanowire, [86][87][88][89] nanorod, [90][91][92][93] nanopyramid, [94][95][96] nano-cone, [97][98][99] and so on. Among these nano-architectures, the nanowire is the most popular choice to fabricate such radially stacked core-shell structure, for example, using the Si nanowire (SiNW) as a core to host amorphous Si thin film to form c-Si/a-Si core-shell, [100][101][102] or III-V thin film as a shell to form such as Si/InP core-shell.…”
Section: Introductionmentioning
confidence: 99%