Growth of large high-quality SiC single crystals

Ohtani, Noboru; Fujimoto, Tatsuo; Katsuno, Masakazu; Aigo, Takashi; Yashiro, Hirokatsu

doi:10.1016/s0022-0248(01)02153-4

Cited by 64 publications

(44 citation statements)

References 18 publications

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“…[11][12][13] MPs were supposed to nucleate at low-angle boundaries between a polytype inclusion and a matrix. 3,4,14 The evolution of polytype boundaries via the formation of microcracks was addressed by Siche et al 15 They assumed that dislocation bundles in the basal plane, located within and near the MPs, and the stress concentrated at the MP surfaces might generate microcracks.…”

Section: Introductionmentioning

confidence: 99%

Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals

et al. 2007

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The role of micropipes in pore formation in SiC crystals with foreign polytype inclusions is studied by means of synchrotron phase sensitive radiography, optical and scanning electron microscopies, and color photoluminescence. The pores at the inclusion boundaries are revealed, and their shapes and locations are analyzed. It is found that the pores arise due to the attraction of micropipes by the foreign polytype interfaces, followed by micropipe coalescence. The observed pores have tubular or slit shapes. Tubular pores nucleate at the inclusion corners, where the inclusion-associated stresses are concentrated. Slit pores spread between them and follow the shape of the inclusion boundaries. We explain the observations within a two-dimensional model of elastic interaction between micropipes and inclusion boundaries, which accounts for free surfaces of micropipes.

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Section: Introductionmentioning

confidence: 99%

Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals

et al. 2007

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“…High purity α-SiC is formed by the Lely process in which SiC is sublimated at 2500 O C in an argon atmosphere. Flake-like α-SiC crystals grow by deposition of the vapor onto a substrate [23]. The vapor constituents during sublimation are mainly Si, Si 2 C, and SiC 2 in specific ratios depending on the temperature [8,9].…”

Section: Fabrication Methodsmentioning

confidence: 99%

Synthesis and Analysis of Alpha Silicon Carbide Components for Encapsulation of Fuel Rods and Pellets

McHugh

Garnier

Griffith

2011

ASME 2011 Small Modular Reactors Symposium

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“…The second zone is the transfer zone (2). It consists of highly porous graphite foams which support the CVD deposit and allow SiC transfer to the sublimation area.…”

Section: Experimental and Calculation Detailsmentioning

confidence: 99%

“…However, up to now, only two different methods have reached an industrial stage; the seeded sublimation growth or PVT (for examples, see the literature [1][2][3][4] ) and the high-temperature (HT) CVD technique. [5] The first one has proven capability in processing large dimension boules, up to 100 mm in diameter and length.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

Chaussende

Blanquet

Baillet

et al. 2006

Chemical Vapor Deposition

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The main trends that govern the continuous-feed physical vapor transport (PVT), bulk-crystal-growth process is investigated experimentally, together with thermodynamic and computation fluid dynamics (CFD) calculations. Several chemical systems are considered. An analysis of the chemistry of every successive step (CVD, transfer, and PVT) is presented first. The effects of hydrogen and chlorine are then investigated. Then, the interaction between the different steps is discussed. The strong chemical interaction which exists between the CVD and the PVT zones is demonstrated to require the consideration of the whole process and not the two zones separately.

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Growth of large high-quality SiC single crystals

Cited by 64 publications

References 18 publications

Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals

Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals

Synthesis and Analysis of Alpha Silicon Carbide Components for Encapsulation of Fuel Rods and Pellets

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

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