Growth of magnetic materials and structures on Si(001) substrates using Co2Si as a template layer

Mendez, S. Olive; Thanh, V. Le; Ranguis, Alain; Derrien, J.

doi:10.1016/j.apsusc.2008.02.193

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…In this work, we theoretically find that a 2D heterojunction made of Co 2 Si and Cu 2 Si monolayers just meets such a requirement which can realize a highly spin polarized current. A Co 2 Si monolayer, a 2D hexagonal structure, which has been synthesized as a template layer in 2008, is a ferromagnetic metal [34]. Replacing Co atoms with Cu atoms, one can obtain another 2D material Cu 2 Si monolayer who has been experimentally realized earlier than Co 2 Si monolayer [35][36][37][38][39][40].…”

Section: Introductionmentioning

confidence: 99%

Spin filters based on two-dimensional materials Co₂Si and Cu₂Si

Meng

Jiang

Zheng

2023

J. Phys.: Condens. Matter

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Spintronic devices have several advantages compared with conventional electronic devices, including non-volatility, faster data processing speed, higher integration densities, less electric power consumption and so on. However, we still face challenges for efﬁciently generating and injecting pure spin polarized current. In this work, we utilize two kinds of two-dimensional materials Co2Si and Cu2Si with both lattice match and band match to construct devices and then research their spin ﬁlter efﬁciency. The spin ﬁlter efﬁciency can be improved effectively either by an appropriate gate voltage at Co2Si region, or by series connection. In both cases the ﬁlter efﬁciencies are much larger than two-dimensional prepared Fe3GeTe2 spin valve and ferromagnetic metallic chairlike O-graphene-H. Also at a quite small bias, we obtain a comparable spin polarized current as those obtained in Fe3GeTe2 spin valve and O-graphene-H obtained at a much larger bias.

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Section: Introductionmentioning

confidence: 99%

Spin filters based on two-dimensional materials Co₂Si and Cu₂Si

Meng

Jiang

Zheng

2023

J. Phys.: Condens. Matter

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“…One of the most successful applications of materials sciences in spintronics is the construction of magnetic random access memories (MRAM), whose principal feature is its non-volatile capacity to store information [1][2][3]. The core of a MRAM is a magnetic tunnel junction (MTJ) where the writing process consists on switching the magnetic orientation of the free layer [4][5][6]. A practical method for this purpose, which simplifies the architecture of the MRAM [7], is the use of the spin-transfer torque (STT) phenomenon consisting on the magnetization or magnetization reversal of the free layer by the injection of a spin polarized pulse [8,9].…”

Section: Introductionmentioning

confidence: 99%

Tailoring magnetization and anisotropy of tetragonal Mn3Ga thin films by strain-induced growth and spin orbit coupling

Gutiérrez-Pérez

Antón

Załęski³

et al. 2018

Intermetallics

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Tetragonal Mn 3 Ga thin films were epitaxially grown with and without strain on Cr and Mo crystalline buffer layers, respectively, using rf-magnetron sputtering. Epilayers grown on Cr with a lattice mismatch of 4.16%, exhibit a high magnetization of 220 kAm −1 and high perpendicular magnetic anisotropy. These characteristics are attributed to interfacial strain. Additionally, a soft ferromagnetic component is observed in these films but not in relaxed layers grown on Mo, where Δa/a is −0.1%. These latest films exhibit a low magnetization of 80 kAm −1 and both perpendicular and in-plane magnetic anisotropies. We propose that high spin orbit coupling of Mo-5s 1 4d 5 orbitals from the buffer layer and strong hybridization with Mn 3+-3d 4 orbitals from the magnetic layer are at the origin of in-plane anisotropy at the interface, while Mn 3 Ga magnetocrystalline anisotropy leads to perpendicular anisotropy on the rest of the film.

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“…Interesting results were shown for the Fe/GaAs system [6], but for direct spin injection into group-IV semiconductors (Si and Ge) the efficiency remains very low. Hence most of the silicides or germanides formed by reaction of a ferromagnetic metal with Si or Ge are not ferromagnetic, and obtaining an epitaxial oxide grown between Ge or Si and a ferromagnetic metal is not trivial [7]. However, theoretical calculations predicted a high spin-injection efficiency for Mn 5 Ge 3 [8] and a spin polarization up to 42% [9] has been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Sequential Phase Formation during Reactive Diffusion of a Nanometric-Thick Mn Film on Ge(111)

Abbes

Portavoce

et al. 2011

SSP

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In recent years, spintronics whose principle is based on controlling the spin of electrons in semiconductor layers is presented as a complementary or even an alternative solution for production of logic devices in microelectronics. It relies on the fact that electric current in a magnetic layer can be spin polarized. Manufacture of such components is based on the use of materials or heterostructures whose electronic properties depend on their magnetic state. The magnetic Mn-Ge system is interesting because of its possible development at high Curie temperature and its integration on Si substrate. Among all of the Mn-Ge phase compounds of the diagram, Mn5Ge3 seems the most interesting one for spintronics applications: it is a stable and ferromagnetic phase at room temperature. In this paper, we present first results of the study, by Reflection High Energy Electron Diffraction (RHEED), X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), of the sequence of formation of the MnxGey phases in the case of reaction of a nanometric-thick Mn film (200nm) deposited by MBE on Ge (111).

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Growth of magnetic materials and structures on Si(001) substrates using Co2Si as a template layer

Cited by 7 publications

References 18 publications

Spin filters based on two-dimensional materials Co₂Si and Cu₂Si

Spin filters based on two-dimensional materials Co₂Si and Cu₂Si

Tailoring magnetization and anisotropy of tetragonal Mn3Ga thin films by strain-induced growth and spin orbit coupling

Sequential Phase Formation during Reactive Diffusion of a Nanometric-Thick Mn Film on Ge(111)

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Growth of magnetic materials and structures on Si(001) substrates using Co2Si as a template layer

Cited by 7 publications

References 18 publications

Spin filters based on two-dimensional materials Co2Si and Cu2Si

Spin filters based on two-dimensional materials Co2Si and Cu2Si

Tailoring magnetization and anisotropy of tetragonal Mn3Ga thin films by strain-induced growth and spin orbit coupling

Sequential Phase Formation during Reactive Diffusion of a Nanometric-Thick Mn Film on Ge(111)

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Spin filters based on two-dimensional materials Co₂Si and Cu₂Si

Spin filters based on two-dimensional materials Co₂Si and Cu₂Si