2008
DOI: 10.1016/j.physc.2008.05.218
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Growth of MgB2 thin films on alumina-buffered Si substrates by using hybrid physical–chemical vapor deposition method

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Cited by 5 publications
(2 citation statements)
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“…One may also grow MgB 2 on the top of the alloy layer [18]. Lee et al have grown MgB 2 films on Al 2 O 3 buffered Si substrates at low temperatures (500 °C-600 °C) using HPCVD [19]. However, the films grown at lower temperatures showed rough surfaces making it difficult to use for micron-size device fabrication, and some alloy formation was observed even with the low deposition temperature and the Al 2 O 3 buffer layer.…”
Section: Methodsmentioning
confidence: 99%
“…One may also grow MgB 2 on the top of the alloy layer [18]. Lee et al have grown MgB 2 films on Al 2 O 3 buffered Si substrates at low temperatures (500 °C-600 °C) using HPCVD [19]. However, the films grown at lower temperatures showed rough surfaces making it difficult to use for micron-size device fabrication, and some alloy formation was observed even with the low deposition temperature and the Al 2 O 3 buffer layer.…”
Section: Methodsmentioning
confidence: 99%
“…The discovery of 39 K superconductivity in MgB 2 [1] has stimulated extensive research on the production of the material in several forms such as tapes [2], wires [3,4], thin and thick films [5][6][7]. The production of MgB 2 films and wires exhibits difficulties arising from the considerable volatility of magnesium and its high reactivity with oxygen.…”
Section: Introductionmentioning
confidence: 99%