We report on the growth of high quality MgB 2 thin films on silicon and silicon-on-insulator substrates by hybrid physical chemical vapor deposition. A boron buffer layer was deposited on all sides of the Si substrate to prevent the reaction of Mg vapor and Si. Ar ion milling at a low angle of 1°was used to reduce the roughness of the boron buffer layer before the MgB 2 growth. An Ar ion milling at low angle of 1°was also applied to the MgB 2 surface to reduce its roughness. The resultant MgB 2 films showed excellent superconducting properties and a smooth surface. The process produces thin MgB 2 films suitable for waveguide-based superconducting hot electron bolometers and other MgB 2 -based electronic devices.