Growth of microcrystalline β-SiC films on silicon by ECR plasma CVD

Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

“…As a result, if the MWCVD process can be applied for the epitaxial growth of 3C‐SiC on Si, the large‐scale fabrication of high‐quality, single‐crystalline, 3C‐SiC film might become a reality, however, even though MWCVD‐based techniques (i.e. electron‐cyclotron‐resonance MWCVD, remote plasma MWCVD) have previously been applied to deposit 3C‐SiC films, only polycrystalline and amorphous SiC films have been obtained, and no epitaxial growth has been achieved 29–33. Therefore, in the present study, we address, for the first time, the possibility of utilizing MWCVD to achieve the low‐temperature, epitaxial growth of 3C‐SiC films on Si wafers.…”

Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD

“…In this case, the deduction of the average grain size by Scherrer's formula, associated to the full width at half maximum (FWHW) of the diffraction peak is hindered, which is due to the proximity of these two peaks. We can also notice the presence of another peak around 29°, which may be attributed to small crystallites of the Si (1 1 1) [27]. Another effect induced by the annealing process is the densification of the films, which is shown in Fig.…”

“…The main feature in Fig. 3 is the prominent diffraction peak at $34°(related to the silicon substrate) and a broad band centered at $35.6°related to (1 1 1) planes of 3C-SiC polytype, which was analyzed after subtracting the peak due to the silicon substrate [27]. In this case, the deduction of the average grain size by Scherrer's formula, associated to the full width at half maximum (FWHW) of the diffraction peak is hindered, which is due to the proximity of these two peaks.…”

Annealing Effects on RF Sputter Deposited a-Si/a-C Multilayers

“…Silicon carbide (SiC) thin films have got a great interest in the last few decades. This material, which can be deposited by different techniques [1][2][3][4][5], is used in a wide field of applications such as a window in solar cells for photovoltaic conversion [1][2][3], a hard coating film for mechanical applications [4] and a nucleation film for diamond growth [5]. Radiofrequency (RF) sputtering is one of the techniques commonly used to produce homogenous thin films of high quality.…”