Growth of millimeter wave AlN/GaN heterostructures by MOCVD

Pan, Chuanqi; Li, Chuanhao; Li, Zhonghui; Peng, Daqing; Zhang, Dongguo; Yang, Qiankun; Sun, Yan; Wu, Shihong

doi:10.1016/j.jcrysgro.2019.125265

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…However, the epitaxial growth in MOCVD actually is under non-equilibrium conditions, which include extremely complicated kinetics and dynamic processes. Especially for the AlN/GaN heterostructural epitaxy, challenges lie in the control of the decomposition and pre-reaction of MO precursors as well as the kinetic processes of deposition, such as adsorption, diffusion, and desorption on the substrate surface 66 – 68 . On the other hand, the Al atom has a high adhesion coefficient and slow migration velocity due to the limit of meddling reaction temperature 69 .…”

Section: Manipulation Of Fields Of Chemical Potentialsmentioning

confidence: 99%

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Gao

Cai

et al. 2021

Light Sci Appl

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As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

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Section: Manipulation Of Fields Of Chemical Potentialsmentioning

confidence: 99%

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Gao

Cai

et al. 2021

Light Sci Appl

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“…III-nitride semiconductor materials have gained widespread attention due to their superior electrical and thermal properties and are extensively used in power devices, such as high electron mobility transistors (HEMTs), light emitting diodes (LED), and laser diodes (LD). [1][2][3][4] Among these, HEMTs exhibit greater efficiency owing to their high electron velocity, wide bandwidth, high breakdown voltage, and high two-dimensional electron gas (2DEG) density at microwave frequencies. 5,6) HEMTs with AlGaN/GaN structures are considered as one of the most promising device structures due to their high-voltage and high-current operation at micro-frequency.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor

You

Matsumura

Ataka

et al. 2022

Jpn. J. Appl. Phys.

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This study proposes a nitrogen-polar (N-polar) AlxGa1-xN/Al0.9Ga0.1N/AlN structure that can generate a large amount of two-dimensional electron gas (2DEG) to enhance the device development of samples. Additionally, we have analyzed the critical thickness of N-polar AlGaN/AlN based on the theoretical calculations of three different values of film thickness. The metalorganic vapor-phase epitaxy method is used to grow N-polar AlxGa1-xN/Al0.9Ga0.1N/AlN on sapphire substrates. The substrates with a misorientation angle of 2° along the m-axis and a-axis directions are selected to determine the effect of the off-cut angle on sample flatness and current-voltage characteristics. Furthermore, we determine the effect of Al contents on N-polar AlxGa1-xN/Al0.9Ga0.1N/AlN under the optimum growth conditions of the growth thickness of the top layer of AlGaN and sapphire substrate. The results indicate that the current throughput increases with a decrease in Al content. Lastly, we have fabricated the N-polar AlGaN/AlN heterostructure field effect transistor (FET) to demonstrated the static FET characteristics.

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“…GaN and AlN have attracted considerable attention due to their wide bandgap. In recent years, power devices such as high‐electron‐mobility transistors (HEMTs), in addition to light‐emitting diodes and laser diodes, have become of increasing interest . The HEMTs with an AlGaN/GaN structure are one of the most promising device structures because of their high voltage and large current operation at microfrequencies .…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

Ito

Sakamoto

Isono

et al. 2020

Physica Status Solidi (b)

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A nitrogen‐polar (N‐polar) AlGaN/AlN high‐electron‐mobility transistor (HEMT) is proposed, and the generation of a 2D electron gas (2DEG) is simulated. The band diagram of N‐polar (Al)GaN/AlN shows the generation of the 2DEG, whereas that of the conventional metal‐polar (Al)GaN/AlN structure shows the generation of a 2D hole gas. Furthermore, the concentration of the 2DEG is considerably high even when the (Al)GaN layer is as thin as a few nanometers. N‐polar AlGaN/AlN is grown on sapphire substrates with a misorientation angle of 2°; furthermore, atomic force microscope measurements in a range of 5 × 5 μm2 demonstrate that the root‐mean‐square value obtained from atomic force microscopy of N‐polar AlGaN is approximately 0.7 nm. N‐polar AlGaN layers with a thickness of approximately 40–60 nm with more than 50% Al content are almost coherently grown on the N‐polar AlN layer with a thickness of approximately 400 nm.

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Growth of millimeter wave AlN/GaN heterostructures by MOCVD

Cited by 6 publications

References 16 publications

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor

Growth and Characterization of Nitrogen‐Polar AlGaN/AlN Heterostructure for High‐Electron‐Mobility Transistor

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