Growth of MoO3 Films by RF Magnetron Sputtering: Studies on the Structural, Optical, and Electrochromic Properties

Abstract

Molybdenum oxide (MoO3) films were deposited on glass and silicon substrates held at temperature 473 K by RF magnetron sputtering of molybdenum target at various oxygen partial pressures in the range 8×10-5–8×10-4 mbar. The deposited MoO3 films were characterized for their chemical composition, crystallographic structure, surface morphology, chemical binding configuration, and optical properties. The films formed at oxygen partial pressure of 4×10-4 mbar were nearly stoichiometric and nanocrystalline MoO3 with crystallite size of 27 nm. The Fourier transform infrared spectrum of the films formed at 4×10-4 mbar exhibited the characteristics vibrational bands of MoO3. The optical band gap of the films increased from 3.11 to 3.28 eV, and the refractive index increased from 2.04 to 2.16 with the increase of oxygen partial pressure from 8×10-5 to 8×10-4 mbar, respectively. The electrochromic performance of MoO3 films formed on ITO coated glass substrates was studied and achieved the optical modulation of about 13% with color efficiency of about 20 cm2/C.

Modified top-down approach for synthesis of molybdenum oxide quantum dots: sonication induced chemical etching of thin films

“… 40 A broad peak observed at ∼811 nm is due to the bridging vibration of Mo O and indicated that the existence of Mo 6+ oxidation state is related to the α-MoO 3 phase. 73 Two absorption peak located at ∼901 and 1002 cm −1 , associated with the stretching vibration of Mo O, which is the specification of terminal double bonds. This confirms the basic characterises of a layered structure of α-MoO 3 .…”

“…71 The characteristics absorption peaks for a-MoO 3 phase of the sample S 1 and S 2 are located at $502, 648, 811, 901, 1002 cm À1 and $502, 512, 674, 811, 901, 1002 cm À1 , respectively. 11,24,40,55,[72][73][74] In addition, two absorption peaks of h-MoO 3 phase are appeared at $548 and 711 cm À1 for the sample S 1 . 67 The magnied area of the FTIR absorption spectra in wavenumber range, 400-1040 cm À1 corresponding to the samples: S 1 and S 2 are shown in the inset of Fig.…”

Fabrication Advancements in Integrated Fluxgate Sensors: A Mini Review

“…[103] The noise was decreased when compared with the previous sensor design. [30,53] It was difficult to miniaturize the fluxgate sensor because the noise would increase if the sensor size were decreased. Fluxgate sensors are tiny in size, which enables us to use them in micro/ nanoelectronics technologies.…”

“…In this way, the material will deposit on the wafer. [30] In EBL, however, a mask for the specified coil pattern will be designed. They have mainly utilised nanoscale size designs.…”

Oxygen vacancies in oxidized and reduced vertically aligned α-MoO3 nanoblades

“…Color centers (F-centers) can form via UV illumination, 11 thermal treatment and applying an electric field. 12 .…”