Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

Siegel, Gene; Gryzbowcki, Gordon; Hilton, Albert; Muratore, Christopher; Snure, Michael

doi:10.3390/cryst9070339

Cited by 19 publications

(10 citation statements)

References 41 publications

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“…Few-layer (∼6) hBN was grown on Ni by metal organic chemical vapor deposition at 900 °C. 54 hBN/SiO 2 /Si substrates for electronic measurements were prepared by wet transfer of hBN grown on Ni followed by Te sputtering.…”

Section: Methodsmentioning

confidence: 99%

Large-area ultrathin Te films with substrate-tunable orientation

et al. 2020

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Section: Methodsmentioning

confidence: 99%

Large-area ultrathin Te films with substrate-tunable orientation

et al. 2020

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“…However, because of the non‐resonant character of Raman scattering in h‐BN, the signal in h‐BN is week less intense in contrast to graphene. This is due to the large h‐BN bandgap compared to available excitation energies in Raman spectroscopy . For pristine Sb 2 WO 6, Raman shifts are observed at around 130 cm −1 , 264 cm −1 , 422 cm −1 , 482 cm −1 , 714 cm −1 , 809 cm −1 and 869 cm −1 …”

Section: Resultsmentioning

confidence: 99%

Optimized h‐BN/Sb₂WO₆ Interface Mediates an Efficient Charge Separation towards Enhanced Photocatalysis

2020

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The unrestrained charge recombination inherently associated with inorganic semiconductors renders them inefficient for the targeted photocatalytic applications in their pristine state. A variety of compositing strategies have thus become important to mitigate the charge recombinations in this regard. In the present work, we report a modified solvothermal synthesis route to affect the synthesis of appropriately band-aligned h-BN/Sb 2 WO 6 nano-composite. The later offers improved photocatalytic efficiency owing to reduced electron-hole recombination ensured through the intimate interfacial contact ascribed to the modified synthesis strategy. The most efficient of h-BN and Sb 2 WO 6 compositions (12-wt % h-BN/Sb 2 WO 6) depicted an 80.8 % photo-catalytic degradation of Rhodamine B (RhB) in 90 min under visible light irradiation compared to 42 % for pure Sb 2 WO 6. The photocatalytic degradation of RhB exhibits k app value of 1.73 × 10 À 2 min À 1 which is 2.8 times greater than k app values of pristine Sb 2 WO 6 (6.01 × 10 À 3 min À 1). The radical scavenger tests reveal that the superoxide radicals (* O 2 À 1) and holes (h +) are the main reactive species. Additionally, composite catalyst revealed a commendable photostability with 77.29 % retention of photocatalytic efficiency after four catalytic cycles.

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“…[56,85] In contrast to TMDCs, few studies were reported on the growth of graphene and h-BN by the MOCVD process. [86][87][88] Examples of MOCVD processes used to grow TMDCs are illustrated in Figure 11b-f. The first paper in 2015 reported MOCVD growth of MoS 2 and WS 2 monolayer continuous films on 4 in.…”

Section: Mocvd Growth Processmentioning

confidence: 99%

Growth of 2D Materials at the Wafer Scale

Guo

Kim

et al. 2022

Advanced Materials

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der Waals (vdW) layered 2D materials are regarded as a very promising new material system to support postsilicon IC technologies because of their rich and excellent physical properties even with thickness at the atomic scale (<1 nm). [1][2][3] It has been reported that monolayer MoS 2 as a transistor channel can be effectively controlled using 1 nm length carbon nanotube gating. Electric field control on such a short channel can achieve MoS 2 transistors with excellent performance, including an on/off current ratio up to 10 6 and a subthreshold swing (SS) of 65 mV s −1 . [4] This indicates that 2D vdW semiconductors are promising candidates to replace silicon for continued downscaling.Many vdW layered 2D materials have been synthesized and explored since the graphene discovery in 2004. They include highly conductive graphene [1] and MXenes (atomic-thin transition metal carbides and nitrides), [5] transition metal chalcogenides (TMDCs, including both metallic [6] and semiconducting [2] ), 2D elemental semiconductors (black phosphorus (BP), [7] tellurium (Te) [8] ), 2D insulators (e.g., hexagonal boron nitride (h-BN) [9] and some oxides). [10] The large variety of vdW layered 2D materials provides a large potential for advanced 2D electronics.However, for scalable applications, all vdW layered 2D materials face a common challenge: transitioning from micrometer-scale 2D flakes to wafer-scale. [1,2,[11][12][13] This is necessary for scaling up 2D vdW materials application in the high-end semiconductor industry. The history of silicon wafer development and its significant impact on modern information technologies has already demonstrated the importance of a large wafer size for volume production at an acceptable cost. Some materials, such as graphene, [14] h-BN, [15] and TMDCs, [16] have been heavily explored for wafer-scale growth, but the reality is that wafer-scale film quality still has enormous space to improve, especially when compared to chip-grade single-crystalline silicon. Other materials such as MXenes, BP, Te, and vdW oxides, have only a few reported papers focusing on their wafer-scale growth. Hence, we feel that this timely review focusing on wafer-scale growth methods of relevant 2D vdW layered materials is urgently needed.The scope of this review is clarified in Figure 1, where the structures, properties, wafer-scale growth methods, and applications of representative vdW layered 2D materials. We begin by briefly introducing these 2D vdW layered materials and discuss Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a sign...

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Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

Cited by 19 publications

References 41 publications

Large-area ultrathin Te films with substrate-tunable orientation

Large-area ultrathin Te films with substrate-tunable orientation

Optimized h‐BN/Sb₂WO₆ Interface Mediates an Efficient Charge Separation towards Enhanced Photocatalysis

Growth of 2D Materials at the Wafer Scale

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Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

Cited by 19 publications

References 41 publications

Large-area ultrathin Te films with substrate-tunable orientation

Large-area ultrathin Te films with substrate-tunable orientation

Optimized h‐BN/Sb2WO6 Interface Mediates an Efficient Charge Separation towards Enhanced Photocatalysis

Growth of 2D Materials at the Wafer Scale

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Optimized h‐BN/Sb₂WO₆ Interface Mediates an Efficient Charge Separation towards Enhanced Photocatalysis