Growth of n-type γ-CuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties

Rajani, K V; Lucas, Francis Olabanji; Daniels, Stephen; Danieluk, D.; Bradley, A. Louise; Cowley, Aidan; Alam, M. M.; McNally, Patrick J.

doi:10.1016/j.tsf.2011.03.036

Cited by 10 publications

(10 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A similar I-VII compound of CuCl (p-type) can be changed to an n-type semiconductor through Zn 2? doping [13,14]. These results suggest that it is possible to achieve n-type CuI by Zn 2?…”

Section: Introductionmentioning

confidence: 96%

Electrical and luminescence properties of Zn2+ doped CuI thin films

Xia

Liu

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Zn 2? doped CuI thin films were prepared by vacuum evaporation technique. The influence of the dopant on crystalline, electrical and luminescence properties of the CuI thin films were investigated. An enhancement in crystallization and the shift of (111) peak were found in the Zn 2? doped CuI films. The native p-type semiconductor of CuI film changed to n-type one for doping concentration up to 2 mol%. Such change is due to the mechanism that the Zn 2? ions not only fill the Cu vacancies but also donate free electrons. For the n-type CuI films, the minimal resistivity and maximal electron concentration was found for the 4 mol% Zn 2? doped sample. All Zn 2? doped CuI thin films showed the 410 and 422 nm near-band emissions. The intensity of the 422 nm emission was significantly improved with 1 mol% Zn 2? doping. The observation can be explained by the increase of the donoracceptor pairs in the film.

show abstract

“…A similar I-VII compound of CuCl (p-type) can be changed to an n-type semiconductor through Zn 2? doping [13,14]. These results suggest that it is possible to achieve n-type CuI by Zn 2?…”

Section: Introductionmentioning

confidence: 96%

Electrical and luminescence properties of Zn2+ doped CuI thin films

Xia

Liu

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…However, the use of a red filter resulted in a significantly different image (Figure a) favoring regions of the grid rather than the coupon. The red emission clearly carries the nantokite XANES information (Figure c) and is presumably due to a midband gap impurity since the normally observed room temperature photoemission from CuCl is in the far violet (383 nm) …”

Section: Results and Discussionmentioning

confidence: 99%

“…The red emission clearly carries the nantokite XANES information (Figure 5c) and is presumably due to a midband gap impurity since the normally observed room temperature photoemission from CuCl is in the far violet (383 nm). 45 Figure 5c shows the XEOL spectra extracted from ROI 1 and ROI 2 indicated in Figure 5a,b. Using the green filter, both ROIs show the presence of cuprite; i.e., they indicate that cuprite is present on both mesh bars and on the coupon.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Evaluation of an X-ray-Excited Optical Microscope for Chemical Imaging of Metal and Other Surfaces

et al. 2014

View full text Add to dashboard Cite

The application of a modular system for the nondestructive chemical imaging of metal and other surfaces is described using heritage metals as an example. The custom-built X-ray-excited optical luminescence (XEOL) microscope, XEOM 1, images the chemical state and short-range atomic order of the top 200 nm of both amorphous and crystalline surfaces. A broad X-ray beam is used to illuminate large areas (up to 4 mm(2)) of the sample, and the resulting XEOL emission is collected simultaneously for each pixel by a charge-coupled device sensor to form an image. The input X-ray energy is incremented across a range typical for the X-ray absorption near-edge structure (XANES) and an image collected for each increment. The use of large-footprint beams combined with parallel detection allows the power density to be kept low and facilitates complete nondestructive XANES mapping on a reasonable time scale. In this study the microscope was evaluated by imaging copper surfaces with well-defined patterns of different corrosion products (cuprite Cu2O and nantokite CuCl). The images obtained show chemical contrast, and filtering the XEOL light allowed different corrosion products to be imaged separately. Absorption spectra extracted from software-selected regions of interest exhibit characteristic XANES fingerprints for the compounds present. Moreover, when the X-ray absorption edge positions were extracted from each spectrum, an oxidation state map of the sample could be compiled. The results show that this method allows one to obtain nondestructive and noninvasive information at the micrometer scale while using full-field imaging.

show abstract

“…The average crystal sizes were calculated using the Scherrer equation . A decrease in the fwhm which correlates with an increase in the average crystal size is noted with the increase of the oxygen plasma exposure time.…”

Section: Resultsmentioning

confidence: 99%

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

Vijayaraghavan¹,

McCoy²,

Chauhan³

et al. 2014

J. Phys. Chem. C

View full text Add to dashboard Cite

p-type transparent conducting CuBr thin films were grown by thermal evaporation of CuBr followed by oxygen plasma treatment. Efficient incorporation of oxygen into the CuBr films was revealed, and the influence of plasma exposure on the electrical, structural, optical, and electronic properties of CuBr films was investigated. Xray diffraction (XRD) analysis indicated the Zincblende structure of the oxygen plasma treated CuBr (OCB) films with the formation of nanocrystalline grains preferentially oriented along the (111) direction. p-type conducting OCB films show >85% average transmittance along with hole concentration, conductivity and Hall mobility values of ∼10 19 cm −3 , ∼1.5 S cm −1 and ∼0.45 cm 2 V −1 s −1 , respectively. The X-ray photoelectron spectra of the OCB films demonstrated that the plasma exposure resulted in a significant increase in the O 1s signal at the surface of OCB films. On the basis of the experimental results from the Hall measurements and X-ray photoemission, a possible explanation comprising the formation of a surface CuO layer is also proposed to elucidate the increase in the p-type conductivity of the OCB films. Strong room temperature emission of OCB films at around 416 nm was also observed, the intensity of which decreased with the increase of oxygen plasma exposure time. The results present oxygen plasma exposure as a simple and promising technique for the production of CuBr-based p-type materials for future transparent electronics.

show abstract

Growth of n-type γ-CuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties

Cited by 10 publications

References 31 publications

Electrical and luminescence properties of Zn2+ doped CuI thin films

Electrical and luminescence properties of Zn2+ doped CuI thin films

Evaluation of an X-ray-Excited Optical Microscope for Chemical Imaging of Metal and Other Surfaces

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

Contact Info

Product

Resources

About