“…Some researchers suggested that the anomalous dielectric behaviour of CCTO is based on intrinsic effects (perfectly stoichiometric, defect-free and single-domain) [1,3], while other have attributed to extrinsic effects (defects, domain boundaries, Cu rich grain boundaries, nanoscale disorder, electrode polarization, bimodal grain distribution, Schottky-type barriers at grain boundary, thermally active dielectric relaxation, lattice distortion, and inter barrier layer capacitance) [4][5][6][7][8][9][10][11][12]. However, an extrinsic effect: inter barrier layer capacitance which based on semiconducting grains and insulating grain boundary is widely accepted.…”