“…If the growth procedure is successful, the resulting boundary remains parallel to the growth direction. In the past, various bicrystals containing different types of grain boundaries out of copper [1,15,16], brass [17], nickel-base superalloy [18], and ferrosilicon alloy [19] were successfully grown using this method, which usually involves the seeded growth of single crystals with pre-selected orientations. Nowadays, the vertical Bridgman technique is widely used to grow semiconducting crystals due to the excellent electrical properties of single-and bicrystals [20][21][22].…”