Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate

Damilano, B.; Brochen, Stéphane; Brault, J.; Hossain, Tasnia; Réverêt, François; Frayssinet, Éric; Chenot, Sébastien; Courville, Aimeric; Cordier, Y.; Sèmond, F.

doi:10.1002/pssa.201532303

Cited by 9 publications

(5 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“… 14 reported the nanoporous material for the photonics through the evaporation-induced self-assembly process and oblique or glancing angle deposition. GaN epitaxial layers were grown on the Si substrate with the embedded Y 2 O 3 /Si 15 , Gd 2 O 3 /Si 16 , AlN/GaN 17 , and AlN/AlGaN 18 DBR structures. Berger et al .…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Fan

Syu

et al. 2017

Sci Rep

View full text Add to dashboard Cite

A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped-AlGaN stack structure was transformed into a porous-AlGaN/undoped-AlGaN stack structure through a doping-selective electrochemical etching process. The reflectivity of the porous AlGaN reflector was 93% at 374 nm with a stop-bandwidth of 35 nm. In an angle-dependent reflectance measurement, the central wavelength of the porous AlGaN reflector had blueshift phenomenon by increasing light-incident angle from 10° to 50°. A cut-off wavelength was observed at 349 nm due to the material absorption of the porous-AlGaN/u-AlGaN stack structure. In the treated UV-LED structure, the photoluminescence emission wavelength was measured at 362 nm with a 106° divergent angle covered by the porous-AlGaN reflector. The light output power of the treated UV-LED structure was higher than that of the non-treated UV-LED structure due to the high light reflectance on the embedded porous AlGaN reflector.

show abstract

Section: Introductionmentioning

confidence: 99%

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors

Fan

Syu

et al. 2017

Sci Rep

View full text Add to dashboard Cite

show abstract

“…To improve the LEE of LEDs, multiple mainstream strategies, such as high refractive index packaging materials, patterned sapphire substrates (PSS) [ 6 , 7 ], distributed Bragg reflectors (DBR) [ 8 ], and Omni-directional reflectors (ODR) [ 9 ], have been employed, resulting in a light extraction efficiency (LEE) of more than 50% for LEDs today. Surface roughening [ 10 ] was then considered a feasible method for further enhancing the LEE in combination with the above technologies.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Light Extraction Efficiency by Self-Masking Technology with Carbonized Photoresist for Light-Emitting Diodes

Zhang

Li²,

Wang³

et al. 2023

Micromachines

View full text Add to dashboard Cite

This work investigates a self-masking technology for roughening the surface of light-emitting diodes (LEDs). The carbonized photoresist with a naturally nano/micro-textured rough surface was used as a mask layer. After growing the Si3N4 passivation layer on LEDs, the texture pattern of the mask layer was transferred to the surface of the passivation layer via reactive ion beam (RIE) dry etching, resulting in LEDs with nano-textured surfaces. This nano-textured surface achieved by self-masking technology can alleviate the total internal reflection at the top interface and enhance light scattering, thereby improving the light extraction efficiency. As a result, the wall-plug efficiency (WPE) and external quantum efficiency (EQE) of rough-surface LEDs reached 53.9% and 58.8% at 60 mA, respectively, which were improved by 10.3% and 10.5% compared to that of the flat-surface Si3N4-passivated LED. Additionally, at the same peak, both LEDs emit a wavelength of 451 nm at 350 mA. There is also almost no difference between the I–V characteristics of LEDs before and after roughening. The proposed self-masking surface roughening technology provides a strategy for LEE enhancement that is both cost-effective and compatible with conventional fabrication processes.

show abstract

“…15,16 But the low mechanical strength and the tiny highly reective area of the air-gap/GaN DBR structure remain a challenge for the photonic device fabrication. Y 2 O 3 /Si, 17 Gd 2 O 3 /Si, 18 AlN/GaN, 19 and AlN/AlGaN 20 DBR structures had been reported for GaN-based optoelectronic devices. Embedded dielectric distributed Bragg reectors, 21,22 Ti 3 O 5 /Al 2 O 3 DBRs, 23 and ITO/dielectric DBRs 24 had been reported to enhance the light extraction process in LED structures.…”

Section: Introductionmentioning

confidence: 99%